快速热退火对在m-Al2O3上生长的短周期{ CdO/ZnO }m超晶格的影响
Effect of rapid thermal annealing on short period {CdO/ZnO}m SLs grown on m-Al2O3
摘要：
在这里，我们报告的表征{CdO/ZnO}m超晶格结构（SL）生长的等离子体辅助分子束外延。利用二次离子质谱（SIMS）和扫描电子显微镜（SEM）在阴极射线发光（CL）和能量色散X射线（EDS）模式下研究了m取向蓝宝石衬底上生长和退火的SL的性质。在900°C的氧气流中快速热退火后，由于Cd原子的迁移和偏析，观察到SL的晶体结构的变形。二次离子质谱测量结果表明，镉在退火样品中的分布依赖于生长的超晶格结构中的CdO和ZnO子层的厚度。深度分辨化学发光测量结果表明，近带边发射峰的位移与二次离子质谱测量的镉分布密切相关。
英文摘要：
Here, we report on the characterization of {CdO/ZnO}m superlattice structures (SLs) grown by plasma assisted molecular beam epitaxy. The properties of as-grown and annealed SLs deposited on m-oriented sapphire were investigated by secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) in cathodoluminescence (CL) and energy dispersive X-ray modes. The deformation of the crystallographic structure of SLs was observed after rapid thermal annealing at 900°C in oxygen flow due to migration and segregation of Cd atoms. SIMS measurements revealed that the distributions of cadmium in the annealed samples depend on the thicknesses of the CdO and ZnO sublayers in the as grown superlattice structures. Depth-resolved CL measurements showed that shifting of the near band edge emission peaks is closely related to the Cd profiles measured with SIMS.
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