使用量子金刚石显微镜实现多层集成电路的高分辨率短路故障定位
High-Resolution Short-Circuit Fault Localization in a Multi-Layer Integrated Circuit using a Quantum Diamond Microscope
AI总结：
针对多层集成电路失效分析难题，提出用量子金刚石显微镜磁成像定位短路故障的方法，验证了其高分辨率、高灵敏度等优势，可用于深层芯片堆叠故障检测。
摘要：
随着制造与设计的不断革新，集成电路（IC）的几何结构与封装变得愈发复杂，电气工程领域需要更强大的失效分析（FA）方法，以应对多层（含多个金属层）及多芯片组件日益增长的故障排查挑战。本研究探索了一种新型电子失效分析方法，即利用量子金刚石显微镜（QDM，一种基于量子传感的磁成像设备）对短路故障产生的磁场进行成像。我们通过检测多层硅裸片中的短路故障量化了该方法的性能，随后评估了QDM在异质集成（HI）裸片堆叠结构中的故障检测能力。本研究确立了基于QDM的磁成像技术作为电子失效分析的有力手段，该技术具备高空间分辨率、高灵敏度及仪器稳定可靠的特点。我们预计这些优势尤其适用于定位具有多层金属层、光学不透明层或光学散射层的堆叠芯片集成电路内部的深层故障。
英文摘要：
As integrated circuit (IC) geometry and packaging become more sophisticated with ongoing fabrication and design innovations, the electrical engineering community needs increasingly-powerful failure analysis (FA) methods to meet the growing troubleshooting challenges of multi-layer (with multiple metal layers) and multi-chip components. In this work, we investigate a new electronics FA method using a quantum diamond microscope (QDM) to image the magnetic fields from short-circuit faults. After quantifying the performance by detecting short-circuit faults in a multi-layer silicon die, we assess how a QDM would detect faults in a heterogeneously integrated (HI) die stack. This work establishes QDM-based magnetic imaging as a competitive technique for electronics FA, offering high spatial resolution, high sensitivity, and robust instrumentation. We anticipate these advantages to be especially useful for finding faults deep within chip-stack ICs with many metal layers, optically-opaque layers, or optically-scattering layers.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
