In this paper we calculate exchange interaction constant between manganese ion inner electronic $d$-shell and GaAs valence band bounded hole using their microscopic multiparticle wave functions. We reveal its parametric dependence on crystal lattice deformations and find out that it could be about and even more than dozens percent when the strain tensor reaches values of $10^{-3} ÷10^{-2}$. This fact is in accordance with the previous hypothesis of deformation dependence of Mn acceptors in GaAs fine energy structure obtained from Raman spectroscopy, and we show that this dependence has the same magnitude. Also, we resolve here the problem of a substantial high temperature mismatch between well-developed theory and experimental data for the static magnetic susceptibility of Mn ions in GaAs. We show by numerical estimates and calculations that quite a strong parametric dependence of the exchange coupling value on GaAs lattice expansion determines the high temperature (above $50~$K) magnetic susceptibility reduction as well.
Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures
我们实施Si掺杂的（110）GaAs的金属层作为高迁移率p型异质结构中的调制掺杂，改变为单独的掺杂层的p生长条件。强自动补偿掺杂的特点是首先在散装样品，确定的金属-绝缘体的过渡密度和确认经典的跳跃导电绝缘制度。为了克服Si p型（110）生长所固有的不良形态，仅用在p型条件下生长的调制掺杂层来制造异质结构。这种异质结构在密度p=2.4x10^11 cm^-2时，空穴迁移率为1.75x10^2 cm ^2/Vs。我们确定的零场自旋分裂特性的p型异质结，但观察到一个显着的各向同性迁移率和持久的光电导不寻常的p-异质结生长使用其他掺杂技术。这种新的调制生长技术是特别相关的p型劈裂边缘过度生长和III-V族生长室，其中硅是唯一的掺杂剂。
