自旋轨道转矩闪变模数转换器
Spin-Orbit Torque Flash Analog-to-Digital Converter
摘要:
虽然模数转换器(ADC)是混合信号集成电路(IC)中的关键部件,但其性能在过去十年中并未得到显著改善。为了实现根本性的改善自旋电子学由于其与CMOS的兼容性以及在存储、类脑计算等方面的广泛应用,被认为是一个合适的选择。本文设计了一个采用面内各向异性磁隧道结(i-MTJ)和自旋轨道矩(SOT)开关机制的3位自旋CMOS Flash ADC的概念验证,制造和表征。建议的ADC取代了电流镜和功耗比较器在传统的Flash ADC与7个不同的重金属(HM)宽度的并行i-MTJ。基于实验测量的Monte-Carlo模拟表明,工艺变化/失配将所提出的ADC的精度限制为2位。此外,最大微分非线性(DNL)和积分非线性(INL)分别为0.739 LSB(最低有效位)和0.7319 LSB。
英文摘要:
Although Analog-to-digital converters (ADCs) are critical components in mixed-signal integrated circuits (IC), their performance has not been improved significantly over the last decade. To achieve a radical improvement (compact, low power and reliable ADCs), spintronics can be considered as a proper candidate due to its compatibility with CMOS and wide applications in storage, neuromorphic computing, and so on. In this paper, a proof-of-concept of a 3-bit spin-CMOS Flash ADC using in-plane-anisotropy magnetic tunnel junctions (i-MTJs) with spin-orbit torque (SOT) switching mechanism is designed, fabricated and characterized. The proposed ADC replaces the current mirrors and power-hungry comparators in the conventional Flash ADC with seven parallel i-MTJs with different heavy metal (HM) widths. Monte-Carlo simulations based on the experimental measurements show the process variations/mismatch limits the accuracy of the proposed ADC to 2 bits. Moreover, the maximum differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.739 LSB (least significant bit) and 0.7319 LSB, respectively.
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