热电PbTe-CdTe块体纳米复合材料
Thermoelectric PbTe-CdTe bulk nanocomposite
AI总结：
本研究提出一种基于Bridgman工艺的热电PbTe-CdTe块体纳米复合材料制备方法，可制备不同掺杂类型、载流子浓度可控且CdTe晶粒均匀分布的中温热电材料。
摘要：
本文介绍了一种掺杂Bi、I或Na的块体形态热电PbTe-CdTe半导体纳米复合材料的制备方法，该材料旨在用于制造中温热电能量发生器。该方法利用了两种半导体因晶体结构不同而具有的极低互溶性，且基于专门设计的Bridgman（布里奇曼）生长工艺。研究表明，在复合材料合成过程中，通过以CdTe化合物的形式引入Cd，并选择高于PbTe熔点但低于CdTe熔点的生长温度，可以促使在热电PbTe的岩盐基体中形成闪锌矿晶体结构的CdTe晶粒。对Cd含量为2、5和10原子百分比的纳米复合材料样品进行的X射线衍射、SEM-EDX（扫描电子显微镜-能量色散X射线光谱）分析以及基本的电学和热电表征结果表明，采用所提出的生长工艺，能够获得载流子浓度为1×10^19至5×10^19 cm^-3的n型（Bi或I掺杂）和p型（Na掺杂）材料，且材料中分布着直径约为100 nm的均匀CdTe晶粒。
英文摘要：
The preparation method of thermoelectric PbTe-CdTe semiconductor nanocomposite in the form of a bulk material doped with Bi, I or Na, intended for production the mid-temperature thermoelectric energy generators is presented. The method takes advantage of the extremely low mutual solubility of both semiconductors, resulting from their different crystal structure, and is based on a specifically designed Bridgman growth procedure. It is shown that the formation of zinc-blende crystalline CdTe grains in the rock-salt matrix of thermoelectric PbTe can be forced during the synthesis of a composite by introducing Cd in the form of CdTe compound and choosing the growth temperature above the melting point of PbTe but below the melting point of CdTe. X-ray diffraction and SEM-EDX spectroscopy analyzes as well as basic electric and thermoelectric characterization of the nanocomposite samples containing 2, 5 and 10 at. \% of Cd showed that using proposed growth procedure, it is possible to obtain both n-type (Bi- or I-doped) and p-type (Na-doped) material with carrier concentration of 1÷5 x 10\^{19} cm\^{-3} and uniformly distributed CdTe grains with a diameter of the order of 100 nm.
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