Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers is critical for scaling up these systems. We present a blueprint for a gate-tunable coupler realized with a two-dimensional electron gas in an InAs/InGaAs heterostructure. Rigorous numerical simulations of the semiconductor and high frequency electromagnetic behavior of the coupler and microwave circuitry yield an on/off ratio of more than one order of magnitude. We give an estimate of the dielectric-limited loss from the inclusion of the coupler in a two qubit system, with coupler coherences ranging from a few to tens of microseconds.
AlGaAs nanowires as a universal platform for GaAs, InGaAs, and InAs quantum dots
Technical University of Denmark（丹麦技术大学）；St. Petersburg State University（圣彼得堡国立大学）；Université Paris Saclay（巴黎萨克雷大学）；CNRS（法国国家科学研究中心）；Alferov University（阿尔费罗夫大学）
Molecular beam epitaxy of wafer-scale O-band InAs/InGaAs quantum dots on GaAs for quantum photonics
Technical University of Munich（慕尼黑工业大学）；TUM School of Computation, Information and Technology, Technical University of Munich（慕尼黑工业大学计算、信息与技术学院）；Julius-Maximilians-Universität Würzburg（维尔茨堡大学）；Saqura Technologies GmbH（萨库拉技术有限公司）；Ruhr University Bochum（波鸿鲁尔大学）；Ludwig-Maximilians-University Munich（慕尼黑大学）；Technical University Berlin（柏林工业大学）；Karlsruhe Institute of Technology（卡尔斯鲁厄理工学院）
Electrically tunable orbital coupling and quantum light emission from O-band quantum dot molecules
Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich（慕尼黑工业大学沃尔特·施特克特研究所）；Munich Center for Quantum Science and Technology (MCQST)（慕尼黑量子科学与技术中心）；Center for Quantum Engineering (ZQE) and School of Computation, Information and Technology, Technical University of Munich（慕尼黑工业大学量子工程中心与计算、信息与技术学院）；Julius-Maximilians-Universität Würzburg, Physikalisches Institut, Lehrstuhl für Technische Physik（维尔茨堡大学物理系技术物理教席）；Walter Schottky Institute, Technical University of Munich（慕尼黑工业大学沃尔特·施特克特研究所）；Saqura Technologies GmbH（萨库拉技术有限公司）；Karlsruhe Institute of Technology, Institute of Photonics and Quantum Electronics IQST（卡尔斯鲁厄理工学院光子学与量子电子学研究所）
Cyclotron and combined phonon-assisted resonances in double-well heterostructure In$_{0.65}$Ga$_{0.35}$As/In$_{0.52}$Al$_{0.48}$As at megagauss magnetic fields
