无损KPFM辅助GaAs高速电子器件制造的质量控制
Nondestructive KPFM-assisted Quality Control in Fabrication of GaAs High-Speed Electronics
摘要：
本文报道了GaAs高速电子器件制造中的无损质量控制方法。该方法依赖于表面电位映射，并使纳入复杂集成电路的有源电子器件的传输特性的刚性体内分析成为可能。这项研究的灵感来自于我们正在开发的用于6G通信的毫米波智能反射表面。为了提供期望的波束形成能力，这样的表面应该利用具有几欧姆的串联电阻的数百个相同的微型GaAs二极管开关。因此，我们开发了一个阶梯状的层状欧姆接触重掺硅砷化镓和交叉研究，通过传输线方法和开尔文探针力显微镜。测得的接触电阻率低至0.15 $μΩ\,$ cm $^2$，导致3 $\times$ 3 $μ$ m $^2$的接触面积的电阻仅为0.6 $Ω$。此外，所观察到的趋势表明，一旦已知了“阶梯”上的表面电位图，就可以严格地分析接触电阻的演变和接触下响应于快速热退火的电阻率分布。
英文摘要：
In this paper, we report on the method of nondestructive quality control that can be used in fabrication of GaAs high-speed electronics. The method relies on the surface potential mapping and enables rigid in vivo analysis of transport properties of an active electronic device incorporated into a complex integrated circuit. The study is inspired by our ongoing development of a millimeter wave intelligent reflective surface for 6G communications. To provide desired beamforming capabilities, such a surface should utilize hundreds of identical microscale GaAs diode switches with series resistance of a few ohms. Thus, we develop a ladder-like layered ohmic contact to heavily Si-doped GaAs and cross-study it via transmission line method and Kelvin probe force microscopy. The contact resistivity as low as 0.15~$μΩ\,$cm$^2$ is measured resulting in only a 0.6~$Ω$ of resistance for the contact area of 3$\times$3~$μ$m$^2$. Moreover, the tendencies observed suggest that one can rigidly analyze the evolution of contact resistance and the profile of resistivity under contact in response to rapid thermal annealing, once the surface potential map across the ``ladder'' is known.
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