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arXiv 2210.15919cond-mat.mtrl-sci
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用于下一代存储器和非传统计算的手征自旋纹理

Chiral Spin Textures for Next-Generation Memory and Unconventional Computing

M. S. Nicholas Tey, Xiaoye Chen, Anjan Soumyanarayanan, Pin Ho

摘要:

手性自旋纹理的实现-包括无数不同的,具有拓扑性质的自旋纳米级排列-已经建立了用于非易失性纳米电子学的工程鲁棒性,节能性和可扩展性元件的途径。特别是,在纳米线跑道和隧道结为基础的设备中的自旋纹理的电流诱导操纵积极研究在存储器,逻辑和非常规计算中的应用。在这篇文章中,我们描绘了自旋纹理的进展背景,以及用于其开发的相关最先进的技术。特别是,我们澄清竞争的能量景观的手征自旋纹理,如skyrmions和手征畴壁,调整其大小,密度和零场稳定性。接下来,我们讨论了自旋织构现象及其对几何约束、线间相互作用和热电效应等外在因素的响应。最后,我们揭示了有前途的手性自旋电子存储器和neuromorphic设备,并讨论了新兴的材料和设备工程的机会。

英文摘要:

The realization of chiral spin textures - comprising myriad distinct, nanoscale arrangements of spins with topological properties - has established pathways for engineering robust, energy-efficient and scalable elements for non-volatile nanoelectronics. Particularly, current-induced manipulation of spin textures in nanowire racetracks and tunnel junction based devices are actively investigated for applications in memory, logic and unconventional computing. In this article, we paint a background on the progress of spin textures, as well as the relevant state-of-the-art techniques used for their development. In particular, we clarify the competing energy landscape of chiral spin textures, such as skyrmions and chiral domain walls, to tune their size, density and zero-field stability. Next, we discuss the spin texture phenomenology and their response to extrinsic factors arising from geometric constraints, inter-wire interactions and thermal-electrical effects. Finally, we reveal promising chiral spintronic memory and neuromorphic devices, and discuss emerging material and device engineering opportunities.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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