溶胶-凝胶氧化铝钝化层GFET工艺产率和器件稳定性的改善
Process Yield and Device Stability Improvement for Sol-gel Alumina Passivation layer based GFETs
摘要：
GFET器件的稳定性是一个主要问题，并且需要良好的钝化层。低成本和低温溶胶-凝胶氧化铝钝化层为基础的GFET在这里研究的目标，以提高器件的稳定性，实现高工艺良率。探索了0.1 M和0.05 M两种不同摩尔浓度的工艺产率和器件稳定性。提取了器件的迁移率、陷阱电荷密度、最小电导平台宽度和最小电导率等参数，比较了器件的稳定性。结果表明，具有0.1 M的GFET由于退火后沟道区中的裂纹形成而具有工艺成品率的问题，其中接近一半的器件在工作，并且工作器件也不稳定并且在一周的时间内退化非常快。另一方面，0.05 M溶胶-凝胶氧化铝基样品在所有工作装置下表现出100 $\%$工艺产率，并观察到超过两个月的稳定行为。因此，我们提出了一个优化的工艺配方的溶胶-凝胶氧化铝基钝化层，以实现最佳的工艺产量和器件稳定性的GFET。
英文摘要：
The stability of GFET devices is a major problem and needs a good passivation layer for the same. Low cost and low-temperature sol-gel alumina passivation layer-based GFETs is studied here with the goals to improve stability of the device and achieve high process yield. The process yield and device stability are explored for two different molarities of 0.1 M and 0.05 M. The parameters like mobility, trap charge density, minimum conductivity plateau width and minimum conductivity are extracted to compare the stability of devices. The results indicate that GFETs with 0.1 M have problems of process yield due to crack formation in the channel region post-annealing, where close to half of the devices are working, and also working devices are are not stable and degrading very fast within a week's time. On the other hand, 0.05 M sol-gel Alumina-based sample exhibits 100$\%$ process yield with all working devices and observed stable behavior for more than two months. Hence we propose an optimized process recipe for a sol-gel Alumina-based passivation layer to achieve the best possible process yield and device stability for GFETs.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
