通过材料结构实现最大电磁局域态密度
Maximum Electromagnetic Local Density of States via Material Structuring
摘要：
电磁局域态密度（LDOS）在光子学工程的许多方面都是至关重要的，从增强光子源的发射到辐射传热和光子学。我们提出了一个框架，用于评估结构化介质中的LDOS上界，该结构化介质可以处理任意带宽，并考虑临界波散射效应，无需启发式近似。边界仅由带宽、材料磁化率和器件占用面积确定，而不对几何形状进行假设。我们推导出一个解析表达式的最大LDOS一致的能量守恒在整个设计域，拓扑优化结构的基准测试后，被证明是几乎紧密的大型设备。最大LDOS增强新的标度律被发现：边界饱和到一个有限的值，增加敏感性和规模的四次方根的带宽的半无限结构的有耗材料，材料选择和设计应用程序的直接影响。
英文摘要：
The electromagnetic local density of states (LDOS) is crucial to many aspects of photonics engineering, from enhancing emission of photon sources to radiative heat transfer and photovoltaics. We present a framework for evaluating upper bounds on LDOS in structured media that can handle arbitrary bandwidths and accounts for critical wave scattering effects with no heuristic approximations. The bounds are solely determined by the bandwidth, material susceptibility, and device footprint, with no assumptions on geometry. We derive an analytical expression for the maximum LDOS consistent with the conservation of energy across the entire design domain, which upon benchmarking with topology-optimized structures is shown to be nearly tight for large devices. Novel scaling laws for maximum LDOS enhancement are found: the bounds saturate to a finite value with increasing susceptibility and scale as the quartic root of the bandwidth for semi-infinite structures made of lossy materials, with direct implications on material selection and design applications.
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