一种用于ISFET传感器的温度无关读出电路
A Temperature Independent Readout Circuit for ISFET-Based Sensor Applications
摘要：
离子敏感场效应晶体管（ISFET）是一种新兴的技术，在许多研究领域受到了广泛关注，包括生物化学，医学和安全应用。然而，与其他类型的传感器相比，ISFET的复杂性使得实现灵敏、快速和可重复的响应更具挑战性。因此，人们开发了各种读出电路来提高ISFET的性能，特别是消除温度效应。提出了一种利用ISFET-MOSFET对阈值电压差实现温度无关读出电路的新方法。利用集成电路仿真软件LTspice分析了ISFET读出电路的性能。使用宏模型来模拟ISFET行为，包括用于MOSFET部分的第一级Spice模型和用于模拟ISFET的表面电势、参考电极和电解质的Verilog-A，以确定变量之间的关系。这样，ISFET的行为通过基于电解质的氢电势（pH）的变化的读出电路的输出电压来监控，由模拟决定。所提出的读出电路对于0-100 $°C$的温度范围和1至13之间的pH具有11.9 $ppm/°C$的温度系数。所提出的ISFET读出电路在简单性方面优于其他设计，并且不需要额外的传感器。
英文摘要：
The ion-sensitive field-effect transistor (ISFET) is an emerging technology that has received much attention in numerous research areas, including biochemistry, medicine, and security applications. However, compared to other types of sensors, the complexity of ISFETs make it more challenging to achieve a sensitive, fast and repeatable response. Therefore, various readout circuits have been developed to improve the performance of ISFETs, especially to eliminate the temperature effect. This paper presents a new approach for a temperature-independent readout circuit that uses the threshold voltage differences of an ISFET-MOSFET pair. The Linear Technology Simulation Program with Integrated Circuit Emphasis (LTspice) is used to analyze the ISFET performance based on the proposed readout circuit characteristics. A macro-model is used to model ISFET behavior, including the first-level Spice model for the MOSFET part and Verilog-A to model the surface potential, reference electrode, and electrolyte of the ISFET to determine the relationships between variables.In this way, the behavior of the ISFET is monitored by the output voltage of the readout circuit based on a change in the electrolyte's hydrogen potential (pH), determined by the simulation. The proposed readout circuit has a temperature coefficient of 11.9 $ppm/°C$ for a temperature range of 0-100 $°C$ and pH between 1 and 13. The proposed ISFET readout circuit outperforms other designs in terms of simplicity and not requiring an additional sensor.
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