Due to its ultra-thin nature, the study of graphene quantum optoelectronics, like gate-dependent graphene Raman properties, is obscured by interactions with substrates and surroundings. For instance, the use of doped silicon with a capping thermal oxide layer limited the observation to low temperatures of a well-defined Kohn-anomaly behavior, related to the breakdown of the adiabatic Born-Oppenheimer approximation. Here, we design an optoelectronic device consisting of single-layer graphene electrically contacted with thin graphite leads, seated on an atomically flat hexagonal boron nitride (hBN) substrate and gated with an ultra-thin gold (Au) layer. We show that this device is optically transparent, has no background optical peaks and photoluminescence from the device components, and no generation of laser-induced electrostatic doping (photodoping). This allows for room-temperature gate-dependent Raman spectroscopy effects that have only been observed at cryogenic temperatures so far, above all the Kohn-anomaly phonon energy normalization. The new device architecture by decoupling graphene optoelectronic properties from the substrate effects, allows for the observation of quantum phenomena at room temperature.
Interaction of Phonons and Dirac Fermions on the Surface of Bi2Se3: A Strong Kohn Anomaly
我们首次测量了强三维拓扑绝缘体Bi 2 Se 3的（001）面声子色散曲线。利用相干氦束表面散射技术对表面声子进行了测量。结果揭示了一个突出的签名的异国情调的金属狄拉克费米子准粒子，包括一个强大的科恩异常。签名是明显的低能量各向同性凸色散表面声子分支的频率最大值为1.8太赫兹，并具有V形最小值在约2kF，定义了科恩异常。理论分析将这种色散分布归因于表面狄拉克费米子对表面声子激发的重正化。狄拉克费米子的贡献，这个重整化的库仑型微扰模型的条款。
