V $_{2}$ O $_{3}$薄膜的结构和电子性质的解纠缠：一个真正的非对称破缺Mott跃迁
Disentangling structural and electronic properties in V$_{2}$O$_{3}$ thin films: a genuine non-symmetry breaking Mott transition
摘要：
相变是决定和控制相关材料量子特性的关键。在这里，通过使用精确的材料合成和角度分辨光电子能谱学的强大组合，我们显示出一个真正的莫特过渡脱装的任何对称性破缺的副作用在薄膜中的V $_{2}$ O $_{3}$的证据。特别是，在鲜明的对比与散装V $_{2}$ O $_{3}$晶体，我们揭示了纯电子动力学接近金属-绝缘体过渡，解开从结构转变，防止由残余的衬底引起的应变。在接近转变时，光谱信号在很宽的温度范围内令人惊讶地缓慢地演变，费米波矢不改变，并且临界温度似乎比所报道的体相温度低得多。我们的研究结果是在一个方面基本的证明一个真正的非对称性破缺莫特过渡的通用基准，可扩展到一个大阵列的相关量子系统，另一方面，由于避免了致命的结构故障，他们持有的承诺，利用金属-绝缘体过渡的实施V $_{2}$ O $_{3}$薄膜的设备。
英文摘要：
Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the powerful combination of precise material synthesis and angle resolved photoelectron spectroscopy, we show evidence for a genuine Mott transition undressed of any symmetry breaking side effects in the thin-films of V$_{2}$O$_{3}$. In particular, and in sharp contrast with the bulk V$_{2}$O$_{3}$ crystals, we unveil the purely electronic dynamics approaching the metal-insulator transition, disentangled from the structural transformation that is prevented by the residual substrate-induced strain. On approaching the transition, the spectral signal evolves surprisingly slowly over a wide temperature range, the Fermi wave-vector does not change, and the critical temperature appears to be much lower than the one reported for the bulk. Our findings are on one side fundamental in demonstrating the universal benchmarks of a genuine non-symmetry breaking Mott transition, extendable to a large array of correlated quantum systems and, on the other, given that the fatal structural breakdown is avoided, they hold promise of exploiting the metal-insulator transition by implementing V$_{2}$O$_{3}$ thin films in devices.
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