头对头BaTiO $_3$畴壁中的大霍尔电子迁移率
Large Hall electron mobilities in head-to-head BaTiO$_3$-domain walls
摘要：
在BaTiO $_3$单晶中沿[110]晶向引入的强电荷头对头（H2H）畴壁（DWs）由于其显著的畴壁导电性（DWC）而被提出作为新型二维电子气（2DEG）。在这里，我们量化这些2DEG属性通过专门的霍尔传输测量范德堡4点几何在室温下，发现电子迁移率达到约400厘米$^2$（Vs）$^{-1}$，而2维电荷密度的金额约7 $\times$ 10 $^3$厘米$^{-2}$。我们强调的必要性，以考虑到热和几何失调失调偏移电压，通过评估磁场扫描下的霍尔电阻，因为否则在推导出的迁移率和电荷密度值的百分之几百的戏剧性的错误可能会发生。除了具体的表征的导电钛酸钡$_3$ DW，我们提出了一种简单，快速的方法来定量表征铁性导电DW，补充以前提出的扫描探针为基础的霍尔电位分析。
英文摘要：
Strongly charged head-to-head (H2H) domain walls (DWs) that are purposely engineered along the [110] crystallographic orientation into ferroelectric BaTiO$_3$ single crystals have been proposed as novel 2-dimensional electron gases (2DEGs) due to their significant domain wall conductivity (DWC). Here, we quantify these 2DEG properties through dedicated Hall-transport measurements in van-der-Pauw 4-point geometry at room temperature, finding the electron mobility to reach around 400~cm$^2$(Vs)$^{-1}$, while the 2-dimensional charge density amounts to ~7$\times$10$^3$cm$^{-2}$. We underline the necessity to take account of thermal and geometrical-misalignment offset voltages by evaluating the Hall resistance under magnetic-field sweeps, since otherwise dramatic errors of several hundred percent in the derived mobility and charge density values can occur. Apart from the specific characterization of the conducting BaTiO$_3$ DW, we propose the method as an easy and fast way to quantitatively characterize ferroic conducting DWs, complementary to previously proposed scanning-probe-based Hall-potential analyses.
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