高失配合金中的无损等离子体激元
Lossless plasmons in highly mismatched alloys
摘要：
我们探讨了高失配合金（HMAs）实现无损等离子体的潜力。具有不存在可能的带间或带内过程的等离子体频率的系统被称为无损的，因为不存在等离子体的2粒子损失通道。我们发现，带分裂的HMA与导带anticrossing保证了一个无损的频率窗口。当这样的材料被掺杂，产生等离子体行为，我们研究的等离子体频率落在无损窗口，实现无损等离子体所需的条件。考虑到一个通用类的HMA与导带反交叉，我们发现在其参数空间内的无损等离子体激元是可能的一些掺杂范围内的通用轮廓。我们的分析表明，具有较重的有效质量的HMA是最有希望实现无损等离子体材料。
英文摘要：
We explore the potential of highly mismatched alloys (HMAs) for realizing lossless plasmonics. Systems with a plasmon frequency at which there are no interband or intraband processes possible are called lossless, as there is no 2-particle loss channel for the plasmon. We find that the band splitting in HMAs with a conduction band anticrossing guarantees a lossless frequency window. When such a material is doped, producing plasmonic behavior, we study the conditions required for the plasmon frequency to fall in the lossless window, realizing lossless plasmons. Considering a generic class of HMAs with a conduction band anticrossing, we find universal contours in their parameter space within which lossless plasmons are possible for some doping range. Our analysis shows that HMAs with heavier effective masses are most promising for realizing a lossless plasmonic material.
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