碲的热2DHG态
Hot 2DHG states in tellurium
摘要：
元素半导体Te由于其独特的能带结构，在基础电子结构研究和器件制造研究领域都有着广泛的应用。特别是在低温下，Te在基面施加磁场时具有很强的量子振荡，既遵循Shubnikov-de Haas（SdH）振荡规则，也遵循对数周期振荡规则.当磁场沿[001]方向施加时，SdH振荡归因于二维空穴气（2DHG）表面态。在[001]方向施加磁场的情况下，Te基单晶中出现了一种有趣的SdH振荡，在~ 75 K时出现最大振荡强度，在200 K时仍有迹可循，这表明2DHG态相当热.非平凡的Berry相位也可以从振荡中得到，这意味着拓扑态的贡献。更重要的是，在不同的Te单晶样品中观察到高温SdH振荡现象，并且Te单晶具有磁性/磁性掺杂剂，显示出对体缺陷的鲁棒性。因此，振荡可能是由体对称性保护的热2DHG态贡献的，这将为高温量子输运研究提供一个新的平台。
英文摘要：
Element semiconductor Te is very popular in both fundamental electronic structure study, and device fabrication research area due to its unique band structure. Specifically, in low temperatures, Te possesses strong quantum oscillations with magnetic field applied in basal plane, either following Shubnikov-de Haas (SdH) oscillation rule or following log-periodic oscillation rule. With magnetic field applied along the [001] direction, the SdH oscillations are attributed to the two-dimensional hole gas (2DHG) surface states. Here we reported an interesting SdH oscillation in Te-based single crystals, with the magnetic field applied along the [001] direction of the crystals, showing the maximum oscillation intensity at ~ 75 K, and still traceable at 200 K, which indicates a rather hot 2DHG state. The nontrivial Berry phase can be also obtained from the oscillations, implying the contribution from topological states. More importantly, the high temperature SdH oscillation phenomena are observed in different Te single crystals samples, and Te single crystals with nonmagnetic/magnetic dopants, showing robustness to bulk defects. Therefore, the oscillation may be contributed by the bulk symmetry protected hot 2DHG states, which will offer a new platform for high-temperature quantum transport studies.
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