二维材料中的M-P态：结构孤子的激发态
Volkov-Pankratov states in a 2d material: excited states of a structural soliton
摘要：
我们发现，部分位错，缺陷，自然出现在双层石墨烯，主机的质量反转的Pankratov（VP）状态，在拓扑非平凡接口的激发态的光谱的模拟。与谷陈氏指数变化引起的位错状态相反，这种状态（i）存在于有和没有层间偏压的情况下，即对于金属以及绝缘体，并且（ii）具有不同的电子和空穴束缚态，其数量与位错宽度成比例。最近发现的异质结的3D拓扑绝缘体，他们的存在，在部分位错的2D材料打开了丰富的结构操场，他们的调查，我们证明了位错类型，即螺旋或边缘，以及位错宽度，都发挥了决定性的作用，在创建的拓扑光谱的激发态。
英文摘要：
We show that partial dislocations, defects that naturally arise in bilayer graphene, host an analogue of the mass inversion Volkov-Pankratov (VP) states, the spectrum of excited states at a topologically non-trivial interface. In contrast to the dislocation states arising from the change in valley Chern index, such states (i) exist both with and without an interlayer bias, i.e. for metallic as well as insulating bulk and (ii) have distinct electron and hole bound states, whose number is proportional to the dislocation width. Recently discovered at heterojunctions of 3d topological insulators, their existence at the partial dislocations of a 2d material opens a rich structural playground for their investigation, and we demonstrate that the dislocation type, i.e. screw or edge, as well as the dislocation width, both play a decisive role in the creation of a topological spectrum of exited states.
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