In the field of materials science, microscopy is the first and often only accessible method for structural characterization. There is a growing interest in the development of machine learning methods that can automate the analysis and interpretation of microscopy images. Typically training of machine learning models requires large numbers of images with associated structural labels, however, manual labeling of images requires domain knowledge and is prone to human error and subjectivity. To overcome these limitations, we present a semi-supervised transfer learning approach that uses a small number of labeled microscopy images for training and performs as effectively as methods trained on significantly larger image datasets. Specifically, we train an image encoder with unlabeled images using self-supervised learning methods and use that encoder for transfer learning of different downstream image tasks (classification and segmentation) with a minimal number of labeled images for training. We test the transfer learning ability of two self-supervised learning methods: SimCLR and Barlow-Twins on transmission electron microscopy (TEM) images. We demonstrate in detail how this machine learning workflow applied to TEM images of protein nanowires enables automated classification of nanowire morphologies (e.g., single nanowires, nanowire bundles, phase separated) as well as segmentation tasks that can serve as groundwork for quantification of nanowire domain sizes and shape analysis. We also extend the application of the machine learning workflow to classification of nanoparticle morphologies and identification of different type of viruses from TEM images.
The progress of magnetization reversal of weakly packed ferromagnetic Ni80Fe20 nanowire arrays of different diameters (40, 50, 70 and 100 nm) electrodeposited in polycarbonate membranes was studied by magnetic force microscopy (MFM). For such a low packing density of nanomagnets, the dipolar interactions between neighbouring wires can be neglected. The intrinsic switching field distribution has been extracted from in situ MFM images and its width was found to be considerably smaller than for densely packed nanowire arrays.
Barcode magnetic nanowires typically comprise a multilayer magnetic structure in a single body with more than one segment type. Interestingly, owing to selective functionalization and novel interactions between the layers, barcode magnetic nanowires have attracted significant attention, particularly in the field of bioengineering. However, an analysis of their magnetic properties at the individual nanowire level remains challenging. With this background, herein, we investigated the characterization of magnetic nanowires at room temperature under ambient conditions based on magnetic images obta…
We investigate the electromechanical interactions in individual P(VDF-TrFE) nanowires in response to localized electrical poling via a conducting atomic force microscope tip. Spatially resolved measurements of piezoelectric coefficients and elastic moduli before and after poling reveal a striking dependence on the polarity of the poling field, notably absent in thin films of the same composition. These observations are attributed to the unclamped nature of the nanowires and the inherent asymmetry in their chemical and electrical interactions with the tip and underlying substrate. Our findings …
The magnetic properties of arrays of nanowires (NWs) and nanotubes (NTs), 150 nm in diameter, electrodeposited inside nanoporous polycarbonate membranes are investigated. The comparison of the nanoscopic magnetic force microscopy (MFM) imaging and the macroscopic behavior as measured by alternating gradient force magnetometry (AGFM) is made. It is shown that MFM is a complementary technique that provides an understanding of the magnetization reversal characteristics at the microscopic scale of individual nanostructures. The local hysteresis loops have been extracted by MFM measurements. The in…
In the present work, we report on the in situ magnetic force microscopy (MFM) study of the magnetization reversal in two-dimensional arrays of ferromagnetic Ni80Fe20 and Co55Fe45 nanowires(NW) with different diameters (40, 50, 70 and 100 nm) deposited inside low porosity (P<1%) nanoporous polycarbonate membranes. In such arrays, the nanowires are sufficiently isolated from each other so that long range dipolar interactions can be neglected. The MFM experiments performed for different magnetization states at the same spot of the samples are analysed to determine the switching field distribution…
Piezoelectric nanowires are promising materials for sensing, actuation and energy harvesting, due to their enhanced properties at the nanoscale. However, quantitative characterization of piezoelectricity in nanomaterials is challenging due to practical limitations and the onset of additional electromechanical phenomena, such as the triboelectric and piezotronic effects. Here, we present an open-circuit conductive atomic force microscopy (cAFM) methodology for quantitative extraction of the axial piezoelectric coefficients of nanowires. We show, both theoretically and experimentally, that the s…
Nanoscale materials usually can trap light and strongly interact with it leading to many photonic device applications. The light-matter interactions are commonly probed by optical spectroscopy, which, however, have some limitations such as diffraction-limited spatial resolution, tiny momentum transfer and non-continuous excitation/detection. In this work, using scanning transmission electron microscopy-electron energy loss spectroscopy (STEM-EELS) with ultra-wide energy and momentum match and sub-nanometer spatial resolution, we study the optical microcavity resonant spectroscopy in a single S…
We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specifically modified for the NW morphology. The fundamental aspects of such a preparation are the initial mechanical stabilization of the NWs and the minimization of the ion-milling process after dimpling th…
Eutectic related reaction is a special chemical/physical reaction involving multiple phases, solid and liquid. Visualization of phase reaction of composite nanomaterials with high spatial and temporal resolution provides a key understanding of alloy growth with important industrial applications. However, it has been a rather challenging task. Here we report the direct imaging and control of the phase reaction dynamics of a single, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparticle, free from environmental confinement or disturbance, using four-dimensional electr…
Ordered Ag nanowire arrays with high aspect ratio and high density self-supporting Ag nanowire patterns were successfully prepared using potentiostatic electrodeposition within the confined nanochannels of a commercial porous anodic aluminium oxide (AAO) template. X-ray diffraction and selected area electron diffraction analysis show that the as-synthesized samples have preferred (220) orientation. Transmission electron microscopy and scanning electron microscopy investigation reveal that large-area and ordered Ag nanowire arrays with smooth surface and uniform diameter were synthesized. Surfa…
We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking fault in these regions. Precise measurements of the cathodoluminescence signal in the vicinity of the stacking fault give access to the exciton diffusion length near this location.
The factors controlling the size and morphology of nanoparticles have so far been poorly understood. Data-driven techniques are an exciting avenue to explore this field through the identification of trends and correlations in data. However, for these techniques to be utilized, large datasets annotated with the structural attributes of nanoparticles are required. While experimental SEM/TEM images collected from controlled experiments are reliable sources of this information, large-scale collection of these images across a variety of experimental conditions is expensive and infeasible. Published…
We report a novel growth mechanism that produces in-plane [1-10] oriented ErSb nanowires formed during codeposition of Er0.3Ga0.7Sb via molecular beam epitaxy (MBE). Nanowires are characterized by in-situ scanning tunneling microscopy (STM), as well as ex-situ transmission electron microscopy (TEM) and electron channeling contrast imaging (ECCI). We show that complexes of macrosteps with step heights on the order of 7 nm form during nanowire growth. The macrosteps are shown to be part of the in-plane nanowire growth process and are directly responsible for the observed stratified distribution …
Correlating synthesis, structure and thermal stability of CuBi nanowires for spintronic applications by electron microscopy and in situ scattering methods
This letter reports on the growth, structure and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy performed on individual NWs are consistent with a configuration composed of conical segments stacked along the NW axis. Micro-photoluminescence measurements and confocal microscopy showed enhanced light emi…
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets at the top of the nanowires. Optical and transport measurements revealed that the limit of Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.e., is mu…
We use Raman spectroscopy in tandem with transmission electron microscopy and DFT simulations to show that extreme (GPa) pressure converts the phase of silicon nanowires from cubic (Si-I) to hexagonal (Si-IV) while preserving the nanowire's cylindrical morphology. In situ Raman scattering of the TO mode demonstrates the high-pressure Si-I to Si-II phase transition near 9 GPa. Raman signal of the TO phonon shows a decrease in intensity in the range 9 to 14 GPa. Then, at 17 GPa, it is no longer detectable, indicating a second phase change (Si-II to Si-V) in the 14 to 17 GPa range. Recovery of ex…
Nanowires of Pr_0.57 Ca_0.41 Ba_0.02 MnO_3 (PCBM) (diameter ~ 80-90 nm and length ~ 3.5 mm) were synthesized by a low reaction temperature hydrothermal method. Single-phase nature of the sample was confirmed by XRD experiments. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the morphology and microstructures of the nanowires. While the bulk PCBM is known to exhibit charge order (CO) below 230 K along with a ferromagnetic transition at 110 K, SQUID measurements on the nanowires of PCBM show that the charge order is completely absent and a…
Using Lorentz transmission electron microscopy we investigate the behavior of domain walls pinned at non-topographic defects in Cr(3 nm)/Permalloy(10 nm)/Cr(5 nm) nanowires of width 500 nm. The pinning sites consist of linear defects where magnetic properties are modified by a Ga ion probe with diameter ~ 10 nm using a focused ion beam microscope. We study the detailed change of the modified region (which is on the scale of the focused ion spot) using electron energy loss spectroscopy and differential phase contrast imaging on an aberration (Cs) corrected scanning transmission electron microsc…
We report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction, electron dispersive spectroscopy, electron energy loss spectroscopy, and fast Fourier transform techniques. A mechanism for growth is identified.
High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The experimental results are compared to simulated images in order to verify possible experimental artefacts. In this work we show that for this type of nano-objects, a residual tilt of the specimen below 15 mrad, away from the crystallographic zone axis does not impair the interpretation of the experimental images.
The exploration of new catalysts for the vapor-liquid-solid (VLS) synthesis of one-dimensional (1-D) materials promises to yield new morphologies and functionality. Here, we show, for the model ZnO system, that this possible using a semiconductor (Ge) catalyst. In particular, two unusual morphologies are described: twisted nanowires and twisted nanotubes, in addition to the usual straight nanowires. The twisted nanotubes show large hollow cores and surprisingly high twisting rates (up to 9o/μm), which cannot be easily explained through the Eshelby twist model. A combination of ex situ and in s…
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with carrier density as high as 1020 electron/cm3 by self-assisted molecular beam epitaxy using Te donors is demonstrated here. Carrier density and electron mobility of highly doped nanowires are extracted through a combination of transport measurement and Kelvin probe force microscopy analysis in single-wire field-effect devices. Low-temperature photoluminescence is…
The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. To reveal the surface controlled sensing mechanism, intentional lattice oxygen defects are created on the surfaces of GaN nanowires for the elucidation of charge transfer process in methane (CH4) sensing. Experimental and simulation results of electron energy loss spectroscopy (EELS) studies on oxygen rich GaN nanowires confirmed the possible presence of 2(ON) and VGa-3ON defect complexes. A glob…
Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobility in individual GaAs nanowires, using in situ transmission electron microscopy (TEM). The conductivity of the nanowires varied with applied uniaxial tensile stress, showing an initial decrease of ~5-20% up to a stress of 1~ 2 GPa, subsequently increasing up to the elastic limit of the nanowires. This is attributed to…
The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of domain wall positions and their motion using spin-transfer torque are important challenges. In this paper, we demonstrate controlled domain wall motion using spin-transfer torque in staggered magnetic nanowires. The devices, fabricated using electron-beam lithography, were tested using a magneto-optical Kerr microscopy and electrical transport measurements. …
Crystal orientation and strain mapping of an individual curved and asymmetrical core-shell hetero-nanowire is performed based on transmission electron microscopy. It relies on a comprehensive analysis of scanning nanobeam electron diffraction data obtained for 1.3 nm electron probe size. The proposed approach handles also the problem of appearing twinning defects on diffraction patterns and allows for investigation of materials with high defect densities. On the basis of the experimental maps and their comparison to finite element simulations, a hidden core-shell geometry and full three-dimens…
The electronic transport and the sensing performance of an individual SnO2 crossed nanowires device in a three-terminal field effect configuration were investigated using a combination of macroscopic transport measurements and Scanning Surface Potential Microscopy (SSPM). The structure of the device was determined using both Scanning Electron- and Atomic Force Microscopy data. The SSPM images of two crossed 1D nanostructures, simulating a prototypical nanowire network sensors, exhibit large dc potential drops at the crossed-wire junction and at the contacts, identifying them as the primary ele…
GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Ga droplets were formed on the oxide surface, and the semiconducting GaAs nanowires grew epitaxially via the vapor-liquid-solid mechanism as single-crystals from holes in the oxide film. We observed two stages of growth of the GaAs nanowires, first the regular growth and second the residual growth after the Ga supply was finished. The magnetic Fe3Si shells were deposited in an As…
Characterizing and controlling the out-of-equilibrium state of nanostructured Mott insulators hold great promises for emerging quantum technologies while providing an exciting playground for investigating fundamental physics of strongly-correlated systems. Here, we use two-colour near-field ultrafast electron microscopy to photo-induce the insulator-to-metal transition in a single VO2 nanowire and probe the ensuing electronic dynamics with combined nanometer-femtosecond resolution. We take advantage of a femtosecond temporal gating of the electron pulse mediated by an infrared laser pulse, and…
We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and wit…
An easy to implement and powerful method for the solution of 3D scattering problems that can be well described by Helmholtz equation is presented. The matrix algebra used provides excellent stability versus the number of junctions as well as great computational speed. The matrix truncation method yields an easy single-parameter convergence procedure. Subsequently, some aspects of the electronic transport through metal nanowires are studied by the use of Landauer's scattering approach to the conductance. We predict the existence of current vortex-rings patterns due to sharp enough narrow-wide c…
We have prepared crystalline nanowires (diameter ~ 50 nm, length ~ a few microns) of the charge ordering manganite Pr_0.5Ca_0.5Mn_O3 using a low reaction temperature hydrothermal method and characterized them using X-ray diffraction, transmission electron microscopy, SQUID magnetometry and electron magnetic resonance measurements. While the bulk sample shows a charge ordering transition at 245 K and an antiferromagnetic transition at 175 K, SQUID magnetometry and electron magnetic resonance experiments reveal that in the nanowires phase, a ferromagnetic transition occurs at ~ 105 K. Further, t…
The ordered arrays of Ag nanowires and nanodots have been grown in ultra-high vacuum on the Si(5 5 7) surface containing regular steps of three bilayer height. Formation of Ag nanostructures have been studied by scanning tunneling microscopy, low energy electron diffraction and Auger electron spectroscopy at room temperature. It was shown that a sample exposure in the vacuum before Ag growth affects the shape of the forming Ag islands. This effect is caused by oxygen adsorption on the silicon surface from the residual atmosphere in the vacuum chamber. When Ag is deposited on the clean silicon …
In one-dimensional (1D) metallic systems, the diverging electron susceptibility and electron-phonon coupling collaboratively drive the electrons into a charge density wave (CDW) state. However, strictly 1D system is unstable against perturbations, whose effect on CDW order requires clarification ideally with altered coupling to surroundings. Here, we fabricate such a system with nanowires of Mo6Se6 bundles, which are either attached to edges of monolayer MoSe2 or isolated freely, by post-annealing the preformed MoSe2. Using scanning tunneling microscopy (STM), we visualized charge modulations …
