根据X射线衍射强度的堆叠硅管芯的温度映射
Temperature mapping of stacked silicon dies from x-ray diffraction intensities
摘要：
集成电路中功率密度的增加已导致集成电路中热热点的增加的普遍性。跟踪这些热点对于防止电路故障至关重要。在3D集成电路中，传统的表面技术如红外测温法无法测量3D温度分布，并且由于金属和大电流密度的存在，光学和磁共振技术难以应用。X射线提供高穿透深度，可用于探测3D结构。我们报告了一种方法，利用温度依赖性的X射线衍射强度通过德拜-沃勒因子，同时映射的温度的一个单独的硅芯片，是一个堆栈的模具的一部分。利用光束线1-ID-E在先进的光子源（阿贡），我们证明了每个单独的硅芯片，温度分辨率为3 K，空间分辨率为100 μ m × 400 μ m和时间分辨率为20秒。利用足够高强度的实验室源，例如，从液体阳极源，该方法可以按比例缩小到实验室，用于3D集成电路的非侵入性温度映射。
英文摘要：
Increasing power densities in integrated circuits has led to an increased prevalence of thermal hotspots in integrated circuits. Tracking these thermal hotspots is imperative to prevent circuit failures. In 3D integrated circuits, conventional surface techniques like infrared thermometry are unable to measure 3D temperature distribution and optical and magnetic resonance techniques are difficult to apply due to the presence of metals and large current densities. X-rays offer high penetration depth and can be used to probe 3D structures. We report a method utilizing the temperature dependence of x-rays diffraction intensity via the Debye-Waller factor to simultaneously map the temperature of an individual silicon die that is a part of a stack of dies. Utilizing beamline 1-ID-E at the Advanced Photon Source (Argonne), we demonstrate for each individual silicon die, a temperature resolution of 3 K, a spatial resolution of 100 um x 400 um and a temporal resolution of 20 s. Utilizing a sufficiently high intensity laboratory source, e.g., from a liquid anode source, this method can be scaled down to laboratories for non-invasive temperature mapping of 3D integrated circuits.
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