HL-LHC抗辐射n-MCz和n-Fz硅微带探测器的TCAD模拟和设计优化
TCAD Simulation and Design Optimization of Radiation Hard n-MCz and n-Fz Si Microstrip Detector for the HL-LHC
摘要：
HL-LHC新的CMS跟踪器探测器采用了辐射硬硅探测器。已经观察到n-MCz和n-Fz Si作为材料可以用于Si微带探测器。这种材料的探测器设计应进行模拟和优化，以获得高的CCE。为了理解n-MCz/n-FzSi探测器的电荷收集行为，需要模拟和比较混合辐照n-MCz Si和中子辐照n-FzSi微带探测器中的辐射损伤效应，该探测器配备有金属悬突和多个保护环。本文对HL-LHC实验中的n-MCz Si/n-Fz Si带形探测器的设计进行了分析和优化，以获得高的CCE。
英文摘要：
A radiation hard Si detector is used in the new CMS tracker detector at HL-LHC. It has been observed that n-MCz and n-Fz Si as a material can be used for the Si micro strip detector. The detector design for this material should be simulated and optimized to get high CCE. In order to understand the charge collection behavior of the n-MCz/n-FzSi detector, it is required to simulate and compare the radiation damage effects in the mixed irradiated n-MCz Si and neutron irradiated n-FzSi micro strip detector equipped with metal overhang and multiple guard rings. In this paper, we have done analysis and optimization of the radiation hard n-MCz Si/n-Fz Si strip detector design for the HL-LHC experiment in order to get high CCE.
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