arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2202.09299cond-mat.mes-hall
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弱耗散环境中的大Andreev束缚态零偏压峰

Large Andreev bound state zero bias peaks in a weakly dissipative environment

Zhichuan Wang, Shan Zhang, Dong Pan, Gu Zhang, Zezhou Xia, Zonglin Li, Donghao Liu, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Yongqing Li, Dong E.… 展开作者

Zhichuan Wang, Shan Zhang, Dong Pan, Gu Zhang, Zezhou Xia, Zonglin Li, Donghao Liu, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Yongqing Li, Dong E. Liu, Runan Shang, Jianhua Zhao, Hao Zhang

摘要:

我们研究了InAs-Al纳米线混合器件中的Andreev束缚态。这些态的能量可以通过栅压或磁场调节到零,在隧穿电导中,在2e^2/h附近出现了较大的零偏压峰。使用弱耗散铅探测这些大的ZBP揭示了由于环境库仑阻塞(ECB)的非费米液体温度(T)依赖性,这是铅作用于纳米线结的相互作用效应。通过增加T,这些大的ZBP要么显示出高度增加,要么从分裂峰过渡到ZBP,两者都显著偏离非耗散器件,其中揭示了费米液体T依赖性。我们的结果表明ECB和热加宽对Andreev束缚态的竞争效应。

英文摘要:

We study Andreev bound states in hybrid InAs-Al nanowire devices. The energy of these states can be tuned to zero by gate voltage or magnetic field, revealing large zero bias peaks (ZBPs) near 2e^2/h in tunneling conductance. Probing these large ZBPs using a weakly dissipative lead reveals non-Fermi liquid temperature (T) dependence due to environmental Coulomb blockade (ECB), an interaction effect from the lead acting on the nanowire junction. By increasing T, these large ZBPs either show a height increase or a transition from split peaks to a ZBP, both deviate significantly from non-dissipative devices where a Fermi-liquid T dependence is revealed. Our result demonstrates the competing effect between ECB and thermal broadening on Andreev bound states.

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