亚微米波长高频行波声子腔
High-frequency traveling-wave phononic cavity with sub-micron wavelength
摘要：
薄膜氮化镓（GAN）作为一种成熟的压电材料是声子集成电路的一个很有前途的平台，它在可扩展的信息处理处理器中具有巨大的潜力。在这里，一个非悬挂的行波声子谐振器的基础上，高声学指数对比机制，实现了在蓝宝石GaN的频率高达5 GHz，这匹配典型的超导量子比特频率。发现当温度从室温（$Q=5000$）降低到$7\,\mathrm{K}$（$Q=30000$）时，品质因数增加六倍，从而获得频率-品质因数乘积$1.5\times10^{14}$。当进一步优化制造工艺时，可获得更高的品质因数。我们的系统显示了巨大的潜力，混合量子器件通过电路量子声动力学。
英文摘要：
Thin-film gallium nitride (GaN) as a proven piezoelectric material is a promising platform for the phononic integrated circuits, which hold great potential for scalable information processing processors. Here, an unsuspended traveling phononic resonator based on high-acoustic-index-contrast mechanism is realized in GaN-on-Sapphire with a frequency up to 5 GHz, which matches the typical superconducting qubit frequency. A sixfold increment in quality factor was found when temperature decreases from room temperature ($Q=5000$) to $7\,\mathrm{K}$ ($Q=30000$) and thus a frequency-quality factor product of $1.5\times10^{14}$ is obtained. Higher quality factors are available when the fabrication process is further optimized. Our system shows great potential in hybrid quantum devices via circuit quantum acoustodynamics.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
