对NaCl/GaAs系统分子束外延中内在复杂性的思考
Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System
摘要：
用于III-V族生长的衬底的高成本对于需要大半导体面积的技术来说可能是成本限制。因此，能够分离器件层并重新使用原始衬底是非常期望的，但是从衬底剥离膜的现有技术具有实质性缺点。这项工作讨论了一些复杂的水溶性，碱金属卤化物盐薄膜之间的III-V族衬底和覆盖层的生长。大部分的困难源于GaAs在高温下在活跃分解的NaCl表面上的生长。有趣的是，在原位电子束入射在NaCl表面上的存在下，之前和期间GaAs沉积，影响III-V族覆盖层的结晶度和形态。在这里，我们调查了广泛的生长温度和时间的元素源和高能电子在不同的点在生长过程中的撞击通量。我们表明，各种各样的形态（离散岛屿，多孔材料，和完全致密的层与尖锐的界面）和结晶度（无定形，结晶，和高度织构化）发生取决于特定的生长条件，主要是由GaAs成核的变化，这是极大地影响了反射高能电子衍射束的存在。
英文摘要：
The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing techniques to lift off a film from a substrate have substantial drawbacks. This work discusses some of the complexities with the growth of a water-soluble, alkali-halide salt thin film between a III-V substrate and overlayer. Much of the difficulty stems from the growth of GaAs on an actively decomposing NaCl surface at elevated temperatures. Interestingly, the presence of an in-situ electron beam incident on the NaCl surface, prior to and during GaAs deposition, affects the crystallinity and morphology of the III-V overlayer. Here we investigate a wide range of growth temperatures and the timing of the impinging flux of both elemental sources and high energy electrons at different points during the growth. We show that an assortment of morphologies (discrete islands, porous material, and fully dense layers with sharp interfaces) and crystallinity (amorphous, crystalline, and highly textured) occur depending on the specific growth conditions, driven largely by changes in GaAs nucleation which is greatly affected by the presence of the reflection high energy electron diffraction beam.
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