一种基于赝磁化的磁电存储器件
A Magnetoelectric Memory Device Based on Pseudo-Magnetization
AI总结：
本研究提出一种基于赝磁化的新型PE/FM异质结磁电存储器件，通过理论分析其非易失性与低电压操控特性，结合电路模型与FMR实验验证了器件可行性与参数准确性。
摘要：
我们提出了一种新型磁电存储器件，该器件在压电/铁磁（PE/FM）异质结中存储磁易轴信息或赝磁化，而非确定的磁化方向。理论上，我们阐明了PE/FM组合如何使赝磁化呈现类铁电行为的非易失性。尤其是当铁磁层为低势垒纳米磁体时，赝磁化可通过极低电压操控。利用经实验校准的电路模型，我们根据磁学参数和电路参数确定了所设想的1T/1C存储器件的开关能量、延迟、开关概率和保持时间，并通过关键参数反向电压vm（应变诱导磁场的电学度量）讨论了其热稳定性。借助铁磁共振（FMR）测量，我们实验提取了沉积在Pb(Mg1/3Nb2/3)0.7Ti0.3O3（PMN-PT）上的CoFeB薄膜和圆形纳米磁体的vm值，该值与理论值吻合良好。我们的实验结果确实表明了所提出的新型器件的可行性，并证实了建模工作中假设的参数。
英文摘要：
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures. Theoretically, we show how a PE/FM combination can lead to non-volatility in pseudo-magnetization exhibiting ferroelectric-like behavior. The pseudo-magnetization can be manipulated by extremely low voltages especially when the FM is a low-barrier nanomagnet. Using a circuit model benchmarked against experiments, we determine the switching energy, delay, switching probability and retention time of the envisioned 1T/1C memory device in terms of magnetic and circuit parameters and discuss its thermal stability in terms of a key parameter called back-voltage vm which is an electrical measure of the strain-induced magnetic field. Taking advantage of ferromagnetic resonance (FMR) measurements, we experimentally extract values for vm in CoFeB films and circular nano-magnets deposited on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) which agree well with the theoretical values. Our experimental findings indeed indicate the feasibility of the proposed novel device and confirm the assumed parameters in our modeling effort.
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