在砷化镓上异质外延生长大面积单晶铅卤钙钛矿薄膜
Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide
AI总结：
本文提出在GaAs衬底上通过PbS界面层实现厘米尺度单晶MAPbBr3钙钛矿薄膜的异质外延生长，并揭示其两步外延机制，为高质量钙钛矿薄膜的规模化制备提供了新途径。
摘要：
铅卤钙钛矿材料已成为高性能光电器件的有力候选材料。大量研究致力于实现大规模单晶钙钛矿薄膜。在此，我们在晶格匹配的砷化镓（GaAs）衬底上以厘米尺度外延生长了单晶甲基铵三溴化铅（MAPbBr3）薄膜。特别是，溶液法制备的硫化铅（II）（PbS）层为在GaAs上通过固-气反应形成MAPbBr3薄膜提供了晶格匹配且具有化学保护作用的界面。结构表征确定了MAPbBr3/PbS/GaAs三层外延结构中的晶体取向，并证实了MAPbBr3在PbS/GaAs上的单晶性质。生长过程中表面形貌的动态演变表明存在两步外延过程。这些基础性认识和实用的生长技术为获得高质量钙钛矿薄膜并应用于此前无法实现的应用提供了可行的指导。
英文摘要：
Lead halide perovskite materials have been emerging as promising candidates for high-performance optoelectronic devices. Significant efforts have sought to realize monocrystalline perovskite films at a large scale. Here, we epitaxially grow monocrystalline methylammonium lead tribromide (MAPbBr3) films on lattice-matched gallium arsenide (GaAs) substrates at a centimeter scale. In particular, a solution-processed lead(II) sulfide (PbS) layer provides a lattice-matched and chemical protective interface for the solid-gas reaction to form MAPbBr3 films on GaAs. Structure characterizations identify the crystal orientations in the trilayer MAPbBr3/PbS/GaAs epi-structure and confirm the monocrystalline nature of MAPbBr3 on PbS/GaAs. The dynamic evolution of surface morphologies during the growth indicates a two-step epitaxial process. These fundamental understandings and practical growth techniques offer a viable guideline to approach high-quality perovskite films for previously inaccessible applications.
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