Strong Coulomb interactions in two-dimensional systems, together with quantum confinement, make many-body processes particularly effective for carrier dynamics, which plays a crucial role in determining carrier lifetime, photoconductivity, and emission yield of the materials. Hereby, by using optical pump and terahertz probe spectroscopy, we have investigated the photocarrier dynamics in the PdSe2 films with different thickness. The experimental results reveal that the photocarrier relaxation consists of two components: a fast component of 2.5 ps that shows the layer-thickness independence, and a slow component has typical lifetime of 7.3 ps decreasing with the layer thickness. Surprisingly, the relaxation times for both fast and slow components are exhibited both pump fluence and temperature independence, which suggests that synergistic interactions between defect trapping and Auger effect dominate the photocarrier dynamics in PdSe2 films. A model involving defect-assisted Auger process is proposed, which can reproduce the experimental results well. The fitting results reveal that the layer dependent lifetime is determined by the defect density rather than carrier occupancy rate after photoexcitation. Our results underscore the interplay between Auger process and defects in two-dimensional semiconductors.
The Auger decay is a relevant recombination channel during the first few femtoseconds of molecular targets impinged by attosecond XUV or soft X-ray pulses. Including this mechanism in time--dependent simulations of charge--migration processes is a difficult task, and Auger scatterings are often ignored altogether. In this work we present an advance of the current state-of-the-art by putting forward a real--time approach based on nonequilibrium Green's functions suitable for first-principles calculations of molecules with tens of active electrons. To demonstrate the accuracy of the method we re…
Auger scattering channels are of fundamental importance to describe and understand the non-equilibrium charge carrier dynamics in graphene. While impact excitation increases the number of carriers in the conduction band and has been observed experimentally, direct access to its inverse process, Auger recombination, has so far been elusive. Here, we tackle this problem by applying our novel setup for ultrafast time-resolved photoelectron momentum microscopy. Our approach gives simultaneous access to charge carrier dynamics at all energies and in-plane momenta within the linearly dispersive Dira…
Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scatteri…
Size-Limited Room Temperature Single-Photon Emission from Sidewall-Treated Fractional Dimension InGaN Quantum Dots: Determined by Density-of-States-Corrected Ultrafast Carrier Dynamics and Improved Signal-to-Noise Ratio
High Intrinsic Mobility and Ultrafast Carrier Dynamics in Multilayer Metal Dichalcogenide MoS2
在金属二硫属化物中载流子迁移率的最终限制，以及与载流子弛豫相关的动力学，尚不清楚。我们提出了测量的多层dichalcogenide二硫化钼的频率依赖性的电导率的光泵太赫兹探测光谱。我们发现这种材料在低温下的迁移率接近4200 cm 2/Vs。散射的温度依赖性表明，迁移率，一个数量级大于以前报道的二硫化钼，是固有的限制在太赫兹频率的声学声子散射。我们的测量载流子弛豫揭示皮秒冷却时间，然后再复合持续数十纳秒，并占主导地位的俄歇散射到缺陷。我们的研究结果提供了一个有用的背景下，了解和评估的二硫化钼为基础的电子和光电子器件的性能。
Biexcitons have been considered as one of the fundamental building blocks for quantum technology because of its overwhelming advantages in generating entangled photon pairs. Although many-body complexes have been demonstrated recently in mono-layer transition metal dichalcogenides (TMDs), the low emission efficiency and scale up capability hinder their applications. Colloidal nanomaterials, with high quantum efficiency and ease of synthesis/processing, are regarded to be an appealing complement to TMDs for biexciton sources. However, a progress towards biexciton emission in colloidal nanomater…
