拉伸GaAs纳米线阵列调谐二次谐波
Second-harmonic generation tuning by stretching arrays of GaAs nanowires
摘要：
我们提出了一种可穿戴设备与III-V族纳米线的柔性聚合物，这是用于主动机械调谐的二次谐波产生强度。用金属有机气相外延法生长了垂直的GaAs纳米线阵列，然后将其嵌入聚二甲基硅氧烷中，用机械剥离法将其从刚性衬底上剥离。实验结果表明，二次谐波产生强度的可调谐性的两个因素为30%的拉伸匹配的模拟，包括尺寸的分布。我们研究了不同的参数对二次谐波产生的带色散和可调谐性的影响，如间距，长度和直径。我们预测至少三个数量级的主动机械调谐的非线性信号强度的纳米线阵列。阵列的灵活性与谐振波长工程一起使这种结构成为未来可弯曲或可拉伸纳米光子器件作为光源或传感器的前景平台。
英文摘要：
We present a wearable device with III-V nanowires in a flexible polymer, which is used for active mechanical tuning of the second-harmonic generation intensity. An array of vertical GaAs nanowires was grown with metalorganic vapour-phase epitaxy, then embedded in polydimethylsiloxane and detached from the rigid substrate with mechanical peel off. Experimental results show a tunability of the second-harmonic generation intensity by a factor of two for 30% stretching which matches the simulations including the distribution of sizes. We studied the impact of different parameters on the band dispersion and tunability of the second-harmonic generation, such as the pitch, the length, and the diameter. We predict at least three orders of magnitude active mechanical tuning of the nonlinear signal intensity for nanowire arrays. The flexibility of the array together with the resonant wavelength engineering make such structures perspective platforms for future bendable or stretchable nanophotonic devices as light sources or sensors.
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