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arXiv 2201.10420cond-mat.mes-hall
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耗散拓扑边态对MnBi2Te4量子化输运的影响

Influences of the dissipative topological edge state on quantized transport in MnBi2Te4

Weiyan Lin, Yang Feng, Yongchao Wang, Zichen Lian, Hao Li, Yang Wu, Chang Liu, Yihua Wang, Jinsong Zhang, Yayu Wang, Xiaodong Zhou, Jian Shen

摘要:

量子霍尔(QH)效应的美妙之处在于源于拓扑边缘态的霍尔电阻量子化的高精度。了解的因素,导致量化击穿不仅提供了重要的见解的性质,这些边缘状态的拓扑保护,但涉及这样的量化运输设备的应用是有益的。在这项工作中,我们结合传统的运输和实空间电导率映射调查是否量子化击穿是绑在边缘状态的消失,在热门的研究MnBi2Te4系统。我们的实验结果明确地表明,当量子化击穿发生时,拓扑边态确实存在。这种边缘态本质上是耗散的,并且由于其扩散特性而可能导致量子化击穿,从而导致与实际器件中的体态和其他边缘态重叠。我们的研究结果引起了人们对QH输运研究中通常无法获得的问题的关注,但在实际测量和设备应用中可以发挥重要作用。

英文摘要:

The beauty of quantum Hall (QH) effect is the metrological precision of Hall resistance quantization that originates from the topological edge states. Understanding the factors that lead to quantization breakdown not only provides important insights on the nature of the topological protection of these edge states, but is beneficial for device applications involving such quantized transport. In this work, we combine conventional transport and real space conductivity mapping to investigate whether the quantization breakdown is tied to the disappearance of edge state in the hotly studied MnBi2Te4 system. Our experimental results unambiguously show that topological edge state does exist when quantization breakdown occurs. Such edge state is dissipative in nature and could lead to a quantization breakdown due to its diffusive character causing overlapping with bulk and other edge states in real devices. Our findings bring attentions to issues that are generally inaccessible in the transport study of QH, but can play important roles in practical measurements and device applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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