浮区法手性控制对映纯过渡金属单硅化物晶体生长
Chirality-Controlled Enantiopure Crystal Growth of a Transition Metal Monosilicide by a Floating Zone Method
摘要：
我们进行了晶体生长，以获得手性控制的对映体纯晶体使用激光二极管加热浮区（LDFZ）的方法与组成梯度的饲料棒。已经论证了，在通过常规方法生长的情况下，$T$ Si（$T$：过渡金属）的晶体旋向性取决于$T$而固定。我们发现，分别从由FeSi-CoSi和FeSi-MnSi组成的组分梯度进料棒中生长出了CoSi和MnSi的右旋单晶。所获得的CoSi和MnSi晶体继承了FeSi的晶种部分的手性，其以右手结构生长，因此具有与文献中的晶体相反的手性。LDFZ方法的进料棒与$T$ Si化合物的各种组合，使$T$ Si的手性的灵活控制，并将有助于澄清结晶手性和手性诱导的物理响应之间的相互作用。
英文摘要：
We performed a crystal growth to obtain chirality-controlled enantiopure crystals using a laser-diode-heated floating zone (LDFZ) method with a composition-gradient feed rod. It has been argued that the crystal handedness of $T$Si ($T$ : transition metal) is fixed depending on $T$ in the case of the ones grown by the conventional methods. We found that right-handed single crystals of CoSi and MnSi were grown from the composition gradient feed rods that consist of FeSi--CoSi and FeSi--MnSi, respectively. The obtained CoSi and MnSi crystals inherit the chirality from the seed part of FeSi, which grows in a right-handed structure, and thus have the chirality opposite to that for the crystals in the literature. The LDFZ method with the feed rods with various combinations of $T$Si compounds enables a flexible control of the chirality of $T$Si and will be useful for clarifying the interplay between the crystalline chirality and chirality-induced physical responses.
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