基于石墨烯的微电子热管理优化主动冷却和制冷
Optimized Active Cooling and Refrigeration using Antidoted Graphene for Heat Management of Microelectronics
摘要：
利用人工缺陷技术，可以对许多二维层状材料的能带结构和输运性质进行调控。一种原型材料系统是解毒石墨烯片，其中使用纳米尺度的聚焦离子或电子束制造周期性孔。在这里，我们研究的导电性，热电势，和主动的冷却和制冷速率的解毒石墨烯样品具有不同的孔半径和孔间距离。我们使用的计算方法，考虑到传输的载流子能量的敏感性，它可以用来描述在扩散，弹道和量子跳跃制度的弹性和非弹性散射。结果表明，与传统的计算方法相比，新的计算方法得到的结果与实验数据更加吻合。还有趣的是，看到冷却和制冷的优化的活性速率对孔间距离和孔半径的分布变化非常稳健，这意味着易于工业化和廉价的制造。同样的分析和研究也可以扩展到许多其他层状材料，包括过渡金属二硫属化物（TMD），蓝色磷烯和碲。
英文摘要：
With the technology of artificial defects creating, we can tune the band structure and transport properties of many two-dimensional (2D) layered materials. One prototype materials system is the antidoted graphene sheet, where periodical pores are made using focuses ion or electron beams in the nanoscale. We here study the electrical conductivity, thermopower, and active rates of cooling and refrigeration of antidoted graphene samples with different pore-radii and interporous distances. We use a calculation method that takes into consider the sensitivity of transport to charge carrier energy, which can be used to describe the elastic and inelastic scatterings in diffusive, ballistic and quantum hopping regimes. It is found that our results from the new calculational approach are more consistent with the experimental data, compared to some traditional methodologies. It is also interesting to see that the optimized active rates of cooling and refrigeration are very robust against the distribution variations of interporous distance and the pore-radius, which implies easy industrialization and inexpensive manufacturing. The same analysis and investigation can also be extended to many other layered materials, including the transitional metal dichalcogenides (TMD), blue phosphorene, and tellurium.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
