能带弯曲和棘轮效应解释了挠曲电接触二极管中的摩擦电现象
Band bending and ratcheting explain triboelectricity in a flexoelectric contact diode
摘要：
摩擦电在几千年前就被认识到了，但电荷转移的基本机制仍然不清楚。我们最近提出了一个模型，其中挠曲电带弯曲，由于当地的粗糙接触驱动摩擦电荷转移非金属。虽然这种从头算模型是符合广泛的观察到的现象，到目前为止，还没有定量分析的建议带弯曲。在这项工作中，我们使用Pt $_{\mathrm{0.8}}$ Ir $_{\mathrm{0.2}}$导电原子力显微镜探针，同时变形Nb掺杂的SrTiO $_{\mathrm{3}}$样品，并收集电流偏置数据。基于包括变形半导体的相关挠曲电带弯曲的分析所期望的电流定量地与实验一致。分析表明，摩擦电转移和强有力的实验证据，弯曲带弯曲的摩擦电接触的根本重要性的一般棘轮机制。
英文摘要：
Triboelectricity was recognized millennia ago, but the fundamental mechanism of charge transfer is still not understood. We have recently proposed a model where flexoelectric band bending due to local asperity contacts drives triboelectric charge transfer in non-metals. While this ab-initio model is consistent with a wide range of observed phenomena, to date there have been no quantitative analyses of the proposed band bending. In this work we use a Pt$_{\mathrm{0.8}}$Ir$_{\mathrm{0.2}}$ conductive atomic force microscope probe to simultaneously deform a Nb-doped SrTiO$_{\mathrm{3}}$ sample and collect current-bias data. The current that one expects based upon an analysis including the relevant flexoelectric band-bending for a deformed semiconductor quantitively agrees with the experiments. The analysis indicates a general ratcheting mechanism for triboelectric transfer and strong experimental evidence that flexoelectric band-bending is of fundamental importance for triboelectric contacts.
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