利用碳化硅中四重自旋态偶极自旋弛豫的低场无微波传感器
Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide
AI总结：
该研究针对碳化硅硅空位量子比特弛豫动力学未被充分探明的问题，通过理论研究其四重自旋态的偶极弛豫机制，量化了弛豫时间$T_1$的影响因素，证明其可用于构建低场无微波量子传感器，为医学生物传感提供新方向。
摘要：
顺磁缺陷与核自旋是点缺陷量子比特中磁场依赖型自旋弛豫的主要来源。相关光信号的检测推动了具备高空间分辨率的先进弛豫测量应用的发展。碳化硅（SiC）中硅空位量子比特的近简并四重基态在这一领域备受关注，因其在零磁场下会产生弛豫率极值，且发射光处于生物组织的第一近红外透射窗口，为开发医学与生物学领域的新型传感应用提供了可能。然而，SiC中硅空位中心的弛豫动力学尚未得到充分探究。本文中，我们呈现了针对不同局域自旋环境下四重自旋态偶极自旋弛豫的综合理论研究结果。我们探讨了其底层物理机制，并量化了与磁场和自旋浴相关的弛豫时间$T_1$。基于这些发现，我们证明SiC中的硅空位量子比特可实现极具潜力的无微波低磁场量子传感器。
英文摘要：
Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications with high spatial resolution. The nearly degenerate quartet ground state of the silicon vacancy qubit in silicon carbide (SiC) is of special interest in this respect, as it gives rise to relaxation rate extrema at vanishing magnetic field values and emits in the first near-infra-red transmission window of biological tissues, providing an opportunity for developing novel sensing applications for medicine and biology. However, the relaxation dynamics of the silicon vacancy center in SiC have not yet been fully explored. In this paper, we present results from a comprehensive theoretical investigation of the dipolar spin relaxation of the quartet spin states in various local spin environments. We discuss the underlying physics and quantify the magnetic field and spin bath dependent relaxation time $T_1$. Using these findings we demonstrate that the silicon vacancy qubit in SiC can implement microwave-free low magnetic field quantum sensors of great potential.
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