具有纳米孔底部包层的电泵浦蓝光激光二极管
Electrically pumped blue laser diodes with nanoporous bottom cladding
摘要：
我们演示了电泵浦的具有纳米多孔底部包层的III族氮化物边发射激光二极管（LD）。采用等离子体辅助分子束外延生长了LD结构。电化学蚀刻Si浓度为6 X 1019 cm-3的高度掺杂的350 nm厚的GAN：Si包覆层以获得15 +/-3%的孔隙率和20 +/-9nm的孔径。将具有纳米孔底部包层的器件与双折射结构进行了比较。在448.7 nm处获得了斜率效率（SE）为0.2 W/A的脉冲模式操作，而没有蚀刻包层的参考器件在457 nm处激射，SE为0.56 W/A。从理论上模拟了多孔底包层半导体激光器的设计。进行的计算允许选择所需的光学模式限制所需的包层的最佳孔隙率和厚度，并降低了光泄漏到衬底和顶部金属接触的风险。该演示为III族氮化物LD的制造开辟了新的可能性。
英文摘要：
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentration of 6 x 1019 cm-3 was electrochemically etched to obtain porosity of 15 +/- 3% with pore size of 20 +/- 9 nm. The devices with nanoporous bottom cladding are compared to the refer-ence structures. The pulse mode operation was obtained at 448.7 nm with a slope efficiency (SE) of 0.2 W/A while the reference device without etched cladding layer was lasing at 457 nm with SE of 0.56 W/A. The de-sign of the LDs with porous bottom cladding was modelled theoretically. Performed calculations allowed to choose the optimum porosity and thickness of the cladding needed for the desired optical mode confinement and reduced the risk of light leakage to the substrate and to the top-metal contact. This demonstration opens new possibilities for the fabrication of III-nitride LDs.
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