合金化B-（AlxGa1-x）2 O3块体直拉单晶B-（Al0 .1Ga0.9）2 O3和多晶B-（Al0 .33Ga0.66）2 O3、B-（Al0 .5Ga0.5）2 O3）及性能趋势
Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends
摘要：
在这项工作中，体直拉法生长的10摩尔的单晶。10%Al_2O_3合金化的B-Ga_2 O_3-单斜晶10%AGO或B-（Al_0.1Ga_（0.9））_2 O_3-的带隙比非故意掺杂的B-Ga_2 O_3的带隙增加了+0.20 eV。此外，33% AGO-B-（Al 0.33Ga 0.67）2 O3-和50% AGO-B-（Al 0.5Ga 0.5）2 O3或B-AlGaO 3-的生长产生多晶单相单斜材料（B-AGO）。所有这三种组合物进行了研究，通过X射线衍射，拉曼光谱，光吸收，和27铝核磁共振（NMR）。通过研究单相B-AGO在大范围的Al_2O_3浓度（10 - 50 mol. %），确定了晶格参数、振动模式、光学带隙和晶体学位置偏好的广泛趋势。所有的晶格参数与Al掺入量呈线性关系。通过核磁共振（NMR）研究发现，Al在B-Ga_2 O_3的两个晶位上都有结合，且随着Al含量的增加，八面体（Ga Ⅱ）晶位的结合变得更加无序（辉光放电质谱和X射线荧光）、光学透射（200 nm - 20 μ m波长）和电阻率。这些测量结果表明，杂质受体掺杂的电补偿是不是高电阻率的可能解释，而是由于铝合金化的氢水平从浅施主到深受主的移位。..续本文仅可供个人使用。任何其他用途都需要事先获得作者和AIP Publishing的许可。这篇文章发表在《应用物理杂志》131 155702上。
英文摘要：
In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 - are obtained, which show +0.20 eV increase in the bandgap compared with unintentionally doped B-Ga2O3. Further, growths of 33% AGO - B-(Al0.33Ga0.67)2O3 - and 50% AGO - B-(Al0.5Ga0.5)2O3 or B-AlGaO3 - produce polycrystalline single-phase monoclinic material (B-AGO). All three compositions are investigated by x-ray diffraction, Raman spectroscopy, optical absorption, and 27Al nuclear magnetic resonance (NMR). By investigating single phase B-AGO over a large range of Al2O3 concentrations (10 - 50 mol. %), broad trends in the lattice parameter, vibrational modes, optical bandgap, and crystallographic site preference are determined. All lattice parameters show a linear trend with Al incorporation. According to NMR, aluminum incorporates on both crystallographic sites of B-Ga2O3, with a slight preference for the octahedral (GaII) site, which becomes more disordered with increasing Al. Single crystals of 10% AGO were also characterized by x-ray rocking curve, transmission electron microscopy, purity (glow discharge mass spectroscopy and x-ray fluorescence), optical transmission (200 nm - 20 um wavelengths), and resistivity. These measurements suggest that electrical compensation by impurity acceptor doping is not the likely explanation for high resistivity, but rather the shift of a hydrogen level from a shallow donor to a deep acceptor due to Al alloying. .. Cont. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 131 155702.
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