Nanoscale control of the metal-insulator transition at LAO/KTO (110) and LAO/KTO (111) interfaces

LaAlO$_3$/SrTiO$_3$ 纳米结构中的电子配对与向列性

Electron Pairing and Nematicity in LaAlO$_3$/SrTiO$_3$ Nanostructures

本文在准一维弹道 LAO/STO 纳米霍尔十字中发现无超导电子配对、反常霍尔效应与电子向列性三者直接关联，配对解对磁场与向列性转变重合，为 SrTiO₃ 基体系电子配对机制提供证据。

Direct Imaging of Sketched Conductive Nanostructures at the LaAlO3/SrTiO3 Interface

Nanoscale control of the quasi-two-dimensional electron gas at the LaAlO3/SrTiO3 (LAO/STO) interface by a conductive probe tip has triggered the development of a number of electronic devices. While the spatial distribution of the conductance is crucial for such devices, it is challenging to directly visualize the local electrical properties at the buried interface. Here we demonstrate conductivity imaging of sketched nanostructures at the LAO/STO interface by microwave impedance microscopy (MIM) with a lateral resolution on the order of 100 nm. The sheet conductance extracted from the MIM data…

Nanoscale phase separation in $La_{0.7}Ca_{0.3}MnO_3$ films: evidence for the texture driven optical anisotropy

The IR optical absorption (0.1-1.5 eV) in the $La_{0.7}Ca_{0.3}MnO_3$ films on LAO substrate exhibits the drastic temperature evolution of the spectral weight evidencing the insulator to metal transition. Single crystal films were found to reveal strong linear dichroism with anomalous spectral oscillations and fairly weak temperature dependence. Starting from the concept of phase separation, we develop the effective medium model to account for these effects. The optical anisotropy of the films is attributed to the texturization of the ellipsoidal inclusions of the quasimetal phase caused by a …

LaAlO$_3$/SrTiO$_3$ (001) 界面处二维电子气的标度紧束缚模型

Scaled tight binding model for a two dimensional electron gas at the (001) LaAlO$_3$/SrTiO$_3$ interface

针对 LaAlO$_3$/SrTiO$_3$ 界面二维电子气纳米结构模拟耗时问题，提出一种标度紧束缚模型，在缩放因子达 8 时仍与常规模型高度一致，显著提升了真实尺寸纳米结构的模拟效率。

Reconfigurable edge-state engineering in graphene using LaAlO$_3$/SrTiO$_3$ nanostructures

The properties of graphene depend sensitively on doping with respect to the charge-neutrality point (CNP). Tuning the CNP usually requires electrical gating or chemical doping. Here, we describe a technique to reversibly control the CNP in graphene with nanoscale precision, utilizing LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructures and conductive atomic force microscope (c-AFM) lithography. The local electron density and resulting conductivity of the LAO/STO interface can be patterned with a conductive AFM tip, and placed within two nanometers of an active graphene device. The proximal LAO/STO n…