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arXiv 2112.03353cond-mat.str-el
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CeOs $_4$ Sb $_{12}$中Ce有效价态、费米能和相界的压致位移

Pressure-induced shift of effective Ce valence, Fermi energy and phase boundaries in CeOs$_4$Sb$_{12}$

K. Götze, M. J. Pearce, M. J. Coak, P. A. Goddard, A. D. Grockowiak, W. A. Coniglio, S. W. Tozer, D. E. Graf, M. B. Maple, P. -C. Ho, M. C. Brown, J. Singleton

摘要:

方钴矿族的CeO 3-$_4$-Sb-$_{12}$具有不寻常的半金属低温$\cal{L}$相,其占据场$H$ -温度$T$相图的楔形区域。我们已经进行了测量的电输运和兆赫电导率的CeOs $_4$ Sb $_{12}$单晶体的压力下,高达3 GPa和高达41 T的高磁场,以调查不同的$H$ - $T$相界的压力的影响。虽然金属$\cal{H}$ -相和$\cal{L}$ -相之间的高温价态转变通过约1 GPa的压力向更高的$T$移动,但我们仅观察到$\cal{S}$ -相的边缘抑制,其在低于1 K的压力下被发现高达1.91 GPa。高场量子振荡已被观察到的压力高达3.0 GPa和费米表面的高场侧的$\cal{H}$相被发现显示出一个令人惊讶的尺寸随着压力的增加而减少,这意味着在电子结构的变化,而不仅仅是晶格参数的收缩。我们评估了不同压力下的有效质量的场依赖性,并反映了CeOs $_4$ Sb $_{12}$的一些性质的样品依赖性,这似乎是有限的低场区域。

英文摘要:

CeOs$_4$Sb$_{12}$, a member of the skutterudite family, has an unusual semimetallic low-temperature $\cal{L}$-phase that inhabits a wedge-like area of the field $H$ - temperature $T$ phase diagram. We have conducted measurements of electrical transport and megahertz conductivity on CeOs$_4$Sb$_{12}$ single crystals under pressures of up to 3 GPa and in high magnetic fields of up to 41 T to investigate the influence of pressure on the different $H$-$T$ phase boundaries. While the high-temperature valence transition between the metallic $\cal{H}$-phase and the $\cal{L}$-phase is shifted to higher $T$ by pressures of the order of 1 GPa, we observed only a marginal suppression of the $\cal{S}$-phase that is found below 1 K for pressures of up to 1.91 GPa. High-field quantum oscillations have been observed for pressures up to 3.0 GPa and the Fermi surface of the high-field side of the $\cal{H}$-phase is found to show a surprising decrease in size with increasing pressure, implying a change in electronic structure rather than a mere contraction of lattice parameters. We evaluate the field-dependence of the effective masses for different pressures and also reflect on the sample dependence of some of the properties of CeOs$_4$Sb$_{12}$ which appears to be limited to the low-field region.

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