arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2110.07884physics.app-phcond-mat.mes-hallcond-mat.mtrl-sci
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纳米图案化2D材料的对齐堆叠--迈向原子分辨率的3D打印

Aligned Stacking of Nanopatterned 2D materials -- Towards 3D printing at atomic resolution

Jonas Haas, Finn Ulrich, Christoph Hofer, Xiao Wang, Kai Braun, Jannik C. Meyer

摘要:

二维材料可以通过将各个层放置在彼此的顶部来组合,使得它们仅通过它们的范德华相互作用来结合。可以任意选择层的顺序,从而实现对材料的基本原子级控制,从而沿着一维提供广泛的特性选择。然而,在平面方向上对结构的同时控制到目前为止仍然相当有限。在这里,我们结合空间控制的修改的二维材料,使用聚焦电子照射或电子束诱导蚀刻,与范德瓦尔斯异质结构的逐层组装。一种新颖的组装工艺使得在组装成异质结构之前可以用任意图案来构造每一层。此外,在电子显微镜中观察下,其使得能够以精确的横向对准(目前精确度为10 nm)堆叠层。总之,这使得能够制造具有最高空间分辨率的几乎任意的3D结构。

英文摘要:

Two-dimensional materials can be combined by placing individual layers on top of each other, so that they are bound only by their van der Waals interaction. The sequence of layers can be chosen arbitrarily, enabling an essentially atomic-level control of the material and thereby a wide choice of properties along one dimension. However, simultaneous control over the structure in the in-plane directions is so far still rather limited. Here, we combine spatially controlled modifications of 2D materials, using focused electron irradiation or electron beam induced etching, with the layer-by-layer assembly of van der Waals heterostructures. A novel assembly process makes it possible to structure each layer with an arbitrary pattern prior to the assembly into the heterostructure. Moreover, it enables a stacking of the layers with accurate lateral alignment, with an accuracy of currently 10nm, under observation in an electron microscope. Together, this enables the fabrication of almost arbitrary 3D structures with highest spatial resolution.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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