三层金属双栅渐变沟道异质结MOSFET的二维解析模型
An Analytical 2-D Model of Triple Metal Double Gate Graded Channel Junctionless MOSFET with Hetero-dielectric Gate Oxide Stack
摘要：
本文导出了横向渐变沟道三金属双栅无结场效应晶体管的二维解析模型，该晶体管具有由SiO $_2$和HfO $_2$组成的异质介质栅氧化层。该模型说明了更高的驱动电流和更好的性能，对危险的SCE和HCE在低于30 nm的制度。本文采用抛物近似方法，通过求解二维泊松方程，在适当的边界条件下构造沟道势和电场。给出了基本的中心电势和表面电势以及中心电场和表面电场，推导了阈值电压、DIBL、亚阈值摆幅（SS）和一个简洁的电流模型。这些参数清楚地显示了所提出的具有异质电介质栅极氧化物堆叠的渐变沟道三金属双栅极结构的优点。该器件具有更好的Ion和Ioff控制，在低功耗应用中具有可靠性。最后，分析模型进行了验证与自洽的数值计算，以说明更好的性能之间可用的无结器件。
英文摘要：
In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model illustrates higher drive current and better performance against hazardous SCEs and HCEs in below 30 nm regime. Parabolic approximation method is used here to construct channel potentials and electric fields by solving 2-D Poisson's equation with applicable boundary conditions. The basic central and surface potentials as well as central and surface electric fields are being illustrated, Threshold voltage, DIBL, sub-threshold swing (SS) and a compact current model have also been deduced. These parameters clearly show the benefits of proposed graded-channel triple-metal double-gate structure with hetero-dielectric gate oxide stack. The device has reliability in low power applications because of its better Ion and Ioff control. Finally, the analytical model is validated with self-consistent numerical calculations to illustrate better performance of among available junctionless devices.
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