内反向偏压pn结：相变超晶格高电阻的可能来源
Internal reverse-biased p-n junctions: a possible origin of the high resistance in phase change superlattice
摘要：
相变超晶格是超低功耗相变存储器的新兴材料技术之一。然而，相变超晶格的电阻开关机制仍然是一个争论的热点。早期的电测量和最近的材料表征表明，Kooi相很可能是制造的低电阻状态。由于难以在原子分辨率下原位表征，电开关超晶格在其高电阻状态下的结构仍然是未知的，主要通过理论建模进行研究。到目前为止，还没有一个简单的模型，可以统一的实验结果，从器件级的电气测量和原子级的材料表征。在这项工作中，我们进行原子输运模型的相变超晶格器件，并提出了一个简单的机制占其高电阻。模型化的高电阻状态是基于界面相变超晶格，以前被误认为是低电阻状态。这项工作推进了对相变超晶格在新兴存储器应用中的理解。
英文摘要：
Phase change superlattice is one of the emerging material technologies for ultralow-power phase change memories. However, the resistance switching mechanism of phase change superlattice is still hotly debated. Early electrical measurements and recent materials characterizations have suggested that the Kooi phase is very likely to be the as-fabricated low-resistance state. Due to the difficulty in in-situ characterization at atomic resolution, the structure of the electrically switched superlattice in its high-resistance state is still unknown and mainly investigated by theoretical modellings. So far, there has been no simple model that can unify experimental results obtained from device-level electrical measurements and atomic-level materials characterizations. In this work, we carry out atomistic transport modellings of the phase change superlattice device and propose a simple mechanism accounting for its high resistance. The modeled high-resistance state is based on the interfacial phase changed superlattice that has previously been mistaken for the low-resistance state. This work advances the understanding of phase change superlattice for emerging memory applications.
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