基于半导体棘轮的上转换器中的超宽带THz/IR上转换及光伏响应
Ultrabroadband THz/IR upconversion and photovoltaic response in semi-conductor ratchet based upconverter
AI总结：
本研究通过MBE集成p型GaAs基棘轮光电探测器与GaAs双异质结LED，制备出覆盖4-200 THz的超宽带THz/IR上转换器，可将1000 K黑体辐射上转换为硅基器件可探测的近红外光，且无偏置时可作为15-200 THz红外光伏探测器。
摘要：
本研究通过分子束外延（MBE）技术将p型GaAs/AlxGa1-xAs棘轮光电探测器（RP，ratchet photodetector）与GaAs双异质结LED（DH-LED）直接串联集成，研制出一种超宽带上转换器件。该器件实现了从太赫兹（THz）到近红外（NIR）波段（4-200 THz）的超宽带光响应，与现有上转换器件相比，覆盖的频率范围宽得多。来自1000 K黑体的宽带红外/太赫兹辐射被成功上转换为可被商用硅基器件探测的近红外光子。RP的正入射吸收特性简化了RP-LED器件的结构，与基于子带间跃迁的上转换器相比更紧凑。除上转换功能外，由于棘轮效应，所提出的上转换器还可在无外加偏置电压的情况下作为红外波段（15-200 THz）的光伏探测器使用。
英文摘要：
An ultrabroadband upconversion device is demonstrated by direct tandem integration of a p-type GaAs/AlxGa1-xAs ratchet photodetector (RP) with a GaAs double heterojunction LED (DH-LED) using the molecular beam epitaxy (MBE). An ultrabroadband photoresponse from terahertz (THz) to near infrared (NIR) region (4-200 THz) was realized that covers a much wider frequency range com-pared with the existing upconversion devices. Broadband IR/THz radiation from 1000 K blackbody is successfully upconverted into NIR photons which can be detected by commercial Si-based device. The normal incidence absorption of the RP simplifies the structure of the RP-LED device and make it more compact compared with the inter-subband transition based upconverters. In addition to the up-conversion function, the proposed upconverter is also tested as photovoltaic detectors in the infrared region (15-200 THz) without an applied bias voltage due to the ratchet effect.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
