多层杂质增强硅太阳电池中长波长light absorption的理论研究
Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities
摘要：
在这篇文章中，我们从理论上证明了多级杂质光伏效应在一个有效的硅双同质结太阳能电池，以确保更长波长的光的扩展吸收。与合适的接触功函数（Ni和Ta分别作为阳极和阴极）一起，来自受主型杂质的三个杂质能级（一个来自Tl，两个来自Zn）已经被引入太阳能电池中的吸收层的能隙中。原始Si太阳能电池分别显示出25.4%的PCE，其中JSC= 37.99mA/cm 2，VOC=0.780V和FF= 85.76%。单独掺入T1杂质水平提供了33.4%的PCE，其中JSC= 51.56mA/cm 2，VOC= 0.789V和FF= 82.03%。由于Zn杂质的引入，太阳能电池的PCE进一步提高到35.4%，短路电流进一步提高了3.76 mA/cm 2。JSC和PCE的这种增强是由于太阳能电池中杂质辅助的两步光子上转换引起的较长波长的光吸收。
英文摘要：
In this article, we theoretically demonstrate multilevel impurity photovoltaic effect in an efficient silicon dual-homojunction solar cell that ensures an extended absorption of longer wavelength light. Along with suitable contact work functions (Ni and Ta as anode and cathode, respectively), three impurity energy levels from acceptor type impurities (One from Tl and two from Zn) have been introduced in the energy gap of the absorber layer in the solar cell. The pristine Si solar cell shows a PCE of 25.4% with JSC= 37.99 mA/cm2, VOC=0.780V and FF=85.76%, respectively. The incorporation of Tl impurity level alone provides a PCE of 33.4%, with JSC= 51.56 mA/cm2, VOC=0.789 V and FF=82.03%, respectively. The PCE of the solar cell further enhances to 35.4% with a further enhancement of the short circuit current by 3.76 mA/cm2 due to the inclusion of Zn impurity into the optimized structure. This enhancement of the JSC and hence PCE is resulted from the longer wavelength light absorption due to impurity-assisted two-step photon upconversion in the solar cell.
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