垂直磁化薄膜中畴壁倾斜引起的反对称磁电阻
Antisymmetric magnetoresistance due to domain wall tilting in perpendicular magnetized films
摘要：
本文报道了在梯度磁场驱动下，在具有非均匀磁化强度分布的垂直磁化CoTb薄膜中观察到的反对称磁电阻效应。通过同步表征输运测量过程中的畴图案的演变，我们证明了在倾斜畴壁附近的非平衡电流引起这种异常MR。此外，理论计算和分析表明，多畴织构的几何因素在产生非平衡电流中起着主导作用。明确建立的异常输运行为和特定的畴壁几何结构之间的相互作用是必不可少的，以加深对反对称MR的理解，并为设计新的畴壁电子器件铺平了新的途径。
英文摘要：
We report the observation of the antisymmetric magnetoresistance (MR) in perpendicular magnetized CoTb films with inhomogeneous magnetization distribution driven by gradient magnetic field. By synchronously charactering the domain pattern evolution during transport measurements, we demonstrate that the nonequilibrium currents in the vicinity of tilting domain walls give rise to such anomalous MR. Moreover, theoretical calculation and analysis reveal that the geometry factor of the multidomain texture plays a dominant role in generating the nonequilibrium current. The explicitly established interplay between the anomalous transport behaviors and the particular domain wall geometry is essential to deepening understanding of the antisymmetric MR, and pave a new way for designing novel domain wall electronic devices.
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