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arXiv 2108.04439cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.app-ph

Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal

Huixin Guo, Zexin Feng, Han Yan, Jiuzhao Liu, Jia Zhang, Xiaorong Zhou, Peixin Qin, Jialin Cai, Zhongming Zeng, Xin Zhang, Xiaoning Wang, Hongyu Chen, Haojiang … 展开作者

Huixin Guo, Zexin Feng, Han Yan, Jiuzhao Liu, Jia Zhang, Xiaorong Zhou, Peixin Qin, Jialin Cai, Zhongming Zeng, Xin Zhang, Xiaoning Wang, Hongyu Chen, Haojiang Wu, Chengbao Jiang, Zhiqi Liu

英文摘要:

One of the main bottleneck issues for room-temperature antiferromagnetic spintronic devices is the small signal read-out owing to the limited anisotropic magnetoresistance in antiferromagnets. However, this could be overcome by either utilizing the Berry-curvature-induced anomalous Hall resistance in noncollinear antiferromagnets or establishing tunnel junction devices based on effective manipulation of antiferromagnetic spins. In this work, we demonstrate the giant piezoelectric strain control of the spin structure and the anomalous Hall resistance in a noncollinear antiferromagnetic metal - D019 hexagonal Mn3Ga. Furthermore, we built tunnel junction devices with a diameter of 200 nm to amplify the maximum tunneling resistance ratio to more than 10% at room-temperature, which thus implies significant potential of noncollinear antiferromagnets for large signal-output and high-density antiferromagnetic spintronic device applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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