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arXiv 2108.03341cond-mat.mtrl-sci
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Cu-Al-Sc合金中的近似面缺陷

Planar defect in approximant: the case of Cu-Al-Sc alloy

Tsutomu Ishimasa, Yeong-Gi So, Marek Mihalkovič

摘要:

本文用电子显微镜和六维分析方法研究了Cu-Al-Sc1/1近似合金中的{110}面缺陷。提出了1/2 <τ,1/τ,0>作为面缺陷的位移矢量。这里τ表示黄金比例。这个向量对应于[111000]型的6维平移,也对应于蔡型簇的c-连接。参照正1/1近似的结构性质,即截顶三十面体骨架和嵌入团簇,建立了平面缺陷的原子结构模型。该结构模型通过观测和模拟HAADF-STEM图像之间的一致性进行了验证。提出了两个平面缺陷相交模型和三个平面缺陷相交处的三相点模型。在这些缺陷处形成的所有局部结构通过所谓的典型单元平铺的概念来理解。

英文摘要:

The {110} planar defect formed in the Cu-Al-Sc 1/1 approximant has been studied by means of electron microscopy and 6-dimensional analysis. As the displacement vector of the planar defect, 1/2 <τ, 1/τ, 0> has been proposed. Here τ denotes the golden ratio. This vector corresponds to a 6-dimensional translation of type [111000] and also to the c-linkage of Tsai-type clusters. An atomic structure model of the planar defect has been constructed referring to the structural properties of the regular 1/1 approximant; namely truncated triacontahedron framework and embedded clusters. This structural model was validated by the agreement between the observed and simulated HAADF-STEM images. Models of the intersection of two planar defects and the triple point, where three planar defects intersect, were also proposed. All local structures formed at these defects are understood by the concept of so-called canonical cell tiling.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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