基于MIM结构的“Janus”双面中红外光电探测器
A "Janus" double sided mid-IR photodetector based on a MIM architecture
摘要：
我们提出了一个中红外（$λ\approx$ 8.3 $μ$ m）量子阱红外探测器（QNDT）的中红外透明基板上制造的，允许与照明从前表面或通过基板的光电探测。该器件是基于一个400 nm厚的GaAs/AlGaAs半导体异质结封装在一个金属-绝缘体-金属（MIM）腔和托管在中红外透明的ZnSe衬底。在有源区的两侧通过电子束光刻对称地图案化金属条。通过将条纹宽度L从L = 1.0 $μ$ m改变为L = 1.3 $μ$ m，检测器光谱覆盖范围从$λ\approx 7.15$ $μ$ m跨越到$λ\approx 8.7$ $μ$ m，从而对光学腔模式进行频率调谐。对该双端口系统进行了微红外被动光学表征和光电流测量。它们揭示了两个探测器端口的相似光谱响应，实验测量的T $_{BLIP}$为$\approx$ 200 K。
英文摘要：
We present a mid-IR ($λ\approx$ 8.3 $μ$m) quantum well infrared photodetector (QWIP) fabricated on a mid-IR transparent substrate, allowing photodetection with illumination from either the front surface or through the substrate. The device is based on a 400 nm-thick GaAs/AlGaAs semiconductor QWIP heterostructure enclosed in a metal-insulator-metal (MIM) cavity and hosted on a mid-IR transparent ZnSe substrate. Metallic stripes are symmetrically patterned by e-beam lithography on both sides of the active region. The detector spectral coverage spans from $λ\approx 7.15$ $μ$m to $λ\approx 8.7$ $μ$m by changing the stripe width L - from L = 1.0 $μ$m to L = 1.3 $μ$m - thus frequency-tuning the optical cavity mode. Both micro-FTIR passive optical characterizations and photocurrent measurements of the two-port system are carried out. They reveal a similar spectral response for the two detector ports, with an experimentally measured T$_{BLIP}$ of $\approx$ 200K.
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