Al $_{0.07}$ Ga $_{0.93}$ N/GaN多量子阱的光学净增益测量
Optical net gain measurement on Al$_{0.07}$Ga$_{0.93}$N/GaN multi-quantum well
摘要：
我们提出了在室温下在Al $_{0.07}$ Ga $_{0.93}$ N/GAN 10周期多量子阱发射在367 nm的净增益测量，使用可变的条纹长度的方法。在样品上的两个不同位置进行测量，其中在218 kW/cm $^{2}$和403 kW/cm $^{2}$下获得净增益阈值。在具有较高阈值的位置，我们观察到的光致发光强度的异常放大，发生长的条纹长度（优于400 $μ$米）和高泵浦功率（优于550千瓦/厘米$^{2}$），导致增益值的高估。我们将这种现象归因于裂纹反射所提供的反馈，裂纹是在外延生长过程中由于不同层之间的强晶格失配而产生的。在实验装置的最大泵浦功率密度（743 kW/cm $^{2}$）下获得的无异常放大的最高增益值为131 cm $^{-1}$。利用阴极发光过程的本征效率极限，我们估计了这种多量子阱结构在室温下的电子束泵浦激光阈值的下限为390 kW/cm $^{2}$。
英文摘要：
We present net gain measurements at room temperature in Al$_{0.07}$Ga$_{0.93}$N/GaN 10-period multi-quantum well emitting at 367 nm, using the variable stripe length method. Measurements were conducted at two different positions on the sample, where the net gain threshold was attained at 218 kW/cm$^{2}$ and 403 kW/cm$^{2}$. At the position with higher threshold, we observed an anomalous amplification of the photoluminescence intensity that occurs for long stripe lengths (superior to 400 $μ$m) and high pumping power (superior to 550 kW/cm$^{2}$), leading to an overestimation of the gain value. We attribute such a phenomenon to the feedback provided by the reflection from cracks, which were created during the epitaxial growth due to the strong lattice mismatch between different layers. The highest gain value without anomalous amplification was 131 cm$^{-1}$, obtained at the maximum pumping power density of the experimental setup (743 kW/cm$^{2}$). Using the intrinsic efficiency limit of the cathodoluminescence process, we estimate a lower limit for electron beam pumped laser threshold at room temperature of 390 kW/cm$^{2}$ for this multi-quantum well structure.
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