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arXiv 2107.03014cond-mat.mtrl-scicond-mat.str-el
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拓扑单晶SnSb2Te4的结构和WAL分析

Structural and WAL analysis of Topological single-crystal SnSb2Te4

Ankush Saxena, M. M. Sharma, Prince Sharma, Yogesh Kumar, Poonam Rani, M. Singh, S. Patnaik, V. P. S. Awana

摘要:

在这里,我们报告成功的单晶生长的SnSb2Te4使用自熔剂的方法。单向晶体生长通过在机械切割的晶体薄片上拍摄的X射线衍射(XRD)图案来确认,而里特维尔德精细粉末XRD(PXRD)图案确认生长晶体的相纯度。扫描电子显微镜(SEM)图像和能量色散X射线分析(EDAX)证实了晶体形态和组成元素的精确化学计量。拉曼光谱中观察到的振动模式也证实了SnSb_2Te_4相的形成。直流电阻率测量证实了生长晶体的金属特性。磁输运测量高达5T的非饱和低磁阻百分比。V型尖点和Hikami Larkin Nagaoka(HLN)拟合证实了SnSb_2Te_4的弱反定域效应。密度泛函理论(DFT)计算显示了拓扑非平凡电子能带结构。本文首次报道了SnSb_2Te_4单晶的MR研究和WAL分析。

英文摘要:

Here, we report successful single crystal growth of SnSb2Te4 using the self-flux method. Unidirectional crystal growth is confirmed through X Ray Diffraction (XRD) pattern taken on mechanically cleaved crystal flake while the rietveld refined Powder XRD (PXRD) pattern confirms the phase purity of the grown crystal. Scanning Electron Microscopy (SEM) image and Energy Dispersive X-Ray analysis (EDAX) confirm crystalline morphology and exact stoichiometry of constituent elements. Vibrational Modes observed in Raman spectra also confirm the formation of the SnSb2Te4 phase. DC resistivity measurements confirm the metallic character of the grown crystal. Magneto-transport measurements up to 5T show a nonsaturating low magneto-resistance percentage. V type cusp and Hikami Larkin Nagaoka (HLN) fitting at lower field confirms the Weak Anti-localization (WAL) effect in SnSb2Te4. Density Functional Theory (DFT) calculations were showing topological non-trivial electronic band structure. It is the first-ever report on MR study and WAL analysis of SnSb2Te4 single crystal.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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