离子门控金属约瑟夫森纳米晶体管中静电场驱动的超流抑制
Electrostatic field-driven supercurrent suppression in ionic-gated metallic Josephson nanotransistors
AI总结：
本文通过实现电子注入不可能的离子门控超导场效应纳米晶体管，证实静电场可驱动金属纳米超导体超流抑制，临界电流降幅达45%，并排除电荷积累与准粒子注入机制，为超导电场调控提供确凿证据。
摘要：
近期实验表明，可以通过栅极电压调控金属纳米超导体的输运性质。这些结果重新引发了关于静电场与超导性之间相互作用的长期争论。事实上，不同研究提出了相互竞争的机制作为该效应的成因：非常规电场效应或准粒子注入。在此，我们通过实现离子门控超导场效应纳米晶体管（ISFETs），其中电子注入不可能发生，为金属纳米超导体中超流的静电场驱动控制提供了确凿证据。我们的Nb ISFETs显示出高达45%的超导临界电流的巨大抑制。此外，在不同ISFETs中观察到的双极性超流抑制，以及不变的临界温度和正常态电阻，也排除了常规的电荷积累/耗尽机制。因此，该效应的微观解释需要一种新的理论，能够描述静态电场与常规超导性之间的非平凡相互作用。
英文摘要：
Recent experiments have shown the possibility of tuning the transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: an unconventional electric field-effect or quasiparticle injection. Here, we provide conclusive evidence for the electrostatic-field-driven control of the supercurrent in metallic nanosized superconductors, by realizing ionic-gated superconducting field-effect nanotransistors (ISFETs) where electron injection is impossible. Our Nb ISFETs show giant suppression of the superconducting critical current of up to 45%. Moreover, the bipolar supercurrent suppression observed in different ISFETs, together with invariant critical temperature and normal-state resistance, also excludes conventional charge accumulation/depletion. Therefore, the microscopic explanation of this effect calls upon a novel theory able to describe the nontrivial interaction of static electric fields with conventional superconductivity.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
