表面势对Weyl半金属Goos-Haenchen位移和Imbert-Fedorov位移的影响
Effects of surface potentials on Goos-Haenchen and Imbert-Fedorov shifts in Weyl semimetals
摘要：
外尔半金属表现出奇异的输运响应，其中最近古斯-哈恩钦（GH）和Imbert-Fedorov（IF）效应重新受到关注，否则，它们是光学系统和某些电子系统中研究得很好的现象。除了通常的参数依赖性的移位继承从底层的哈密顿描述的外尔系统和/或引起的外部控制，IF移位进一步进行拓扑身份-它取决于手征的外尔锥。一个现实的系统外尔半金属自然容纳表面电位引起的杂质存在于其表面上，可能会造成障碍，以观察清洁的运输签名预测的理论模型。分类这些潜力，我们研究了它们对GH和IF的变化的影响，以提供有用的指导，未来的实验，调整到的目标，表征外尔半金属和可能实现的新设备的基础上，这些现象。一个传输矩阵为基础的方法被调用来研究跨接口的外尔波函数的配置文件，这是托管的杂质电位，揭示这样的潜力可能会导致几个识别的效果，在某些情况下，甚至延伸到完全抵消IF移位，并引起像谷反转的现象。
英文摘要：
Weyl semimetals exhibit exotic transport responses, among which, recently Goos-Haenchen (GH) and Imbert-Fedorov (IF) effects have received a revived attention, which are, otherwise, well-studied phenomena in optical systems and certain electronic systems. Besides the usual parametric dependence of the shifts inherited from the underlying Hamiltonian to describe the Weyl system and/or that induced by external controls, the IF shift further carries a topological identity -- it depends on the chirality of the Weyl cones. A realistic system of Weyl semimetal naturally accommodates surface potentials induced by impurities present on its surface that could pose impediments to observe clean transport signatures predicted in theoretical models. Classifying these potentials, we study their effects on GH and IF shifts to provide useful guidance to future experiments that are tuned to the objective of characterizing Weyl semimetals and for a possible realisation of novel devices based on these phenomena. A transfer matrix-based approach is invoked to study the profile of Weyl wavefunctions across the interface which is hosting the impurity potentials, revealing that such potentials can lead to several discerning effects which, in certain cases, extend even to nullifying the IF shift completely and giving rise to phenomenon like valley inversion.
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