非晶硅的反常Staebler-Wronski效应
Abnormal Staebler-Wronski effect of amorphous silicon
摘要：
在过去五年中取得的巨大成就，如创纪录效率的非晶硅/晶体硅异质结（SHJ）太阳能电池和尖端的钙钛矿/SHJ串联太阳能电池，将氢化非晶硅（a-Si：H）置于新兴光致发光的最前沿。由于在非晶四价硅中三价硼（B）的极低掺杂效率，上述器件的光捕获受到其填充因子（FF）的限制，填充因子（FF）是载流子传输的直接度量。开发高导电掺杂a-Si：H以最小化FF损耗是具有挑战性但至关重要的。在这里，我们报告了强光浸泡可以有效地提高暗电导的B掺杂的a-Si：H“薄膜”，这是一个异常的Staebler-Wronski效应。通过对SHJ太阳能电池实施这种异常效应，我们在244.63-cm 2的晶片上实现了25.18%的认证功率转换效率（PCE）（指定面积上为26.05%）和85.42%的FF。该PCE是总面积“顶/背”接触硅太阳能电池的最高报告值之一。FF达到了Shockley-Queisser极限的98.30%。
英文摘要：
Great achievements in last five years, such as record-efficient amorphous/crystalline silicon heterojunction (SHJ) solar cells and cutting-edge perovskite/SHJ tandem solar cells, place hydrogenated amorphous silicon (a-Si:H) at the forefront of emerging photovoltaics. Due to the extremely low doping efficiency of trivalent boron (B) in amorphous tetravalent silicon, light harvesting of aforementioned devices are limited by their fill factors (FF), which is a direct metric of the charge carrier transport. It is challenging but crucial to develop highly conductive doped a-Si:H for minimizing the FF losses. Here we report intensive light soaking can efficiently boost the dark conductance of B-doped a-Si:H "thin" films, which is an abnormal Staebler-Wronski effect. By implementing this abnormal effect to SHJ solar cells, we achieve a certificated power conversion efficiency (PCE) of 25.18% (26.05% on designated area) with FF of 85.42% on a 244.63-cm2 wafer. This PCE is one of the highest reported values for total-area "top/rear" contact silicon solar cells. The FF reaches 98.30 per cent of its Shockley-Queisser limit.
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